Stmicroelectronics International N.v.

Stmicroelectronics Pvt. Ltd.

Stmicroelectronics S.r.l.

Mediatek Singapore Pte. Ltd.

Ashish Kumar

Chandrajit Debnath

Pratap Narayan Singh

Vivek Nautiyal

Kedar Janardan Dhori

Vinay Kumar

Rakesh Malik

Manish Umedlal Patel

Dipti Arya

Prashant Dubey

Kaushik Saha

Danilo Rimondi

Rajiv Kumar Roy

Carolina Selva

Praveen Kumar Verma

Naveen Batra

Navneet Gupta

Hitesh Chawla

Abhijit Uplenchwar

Piyush Jain

Joyjit Mullick

ShaileshKumar Pathak

Mohammad Aftab Alam

Saurabh Agarwal

R Sai Krishna

Devesh Dwivedi

Abhishek Chaudhary

Mohammed Aftab Alam

Disclosed herein is an electronic device, including a plurality of row decoders. Each row decoder includes decoder logic generating an initial word line signal and word line driver circuitry generating an inverse word line signal at an intermediate node from the initial word line signal, and generating a word line signal at a word line node from the inverse word line signal. A word line underdrive p-channel transistor has a source coupled to the intermediate node, a drain coupled to a word line underdrive sink, and a gate controlled based upon the inverse word line signal. Negative bias generation circuitry generates the negative bias voltage at a gate of the word line underdrive p-channel transistor when the initial word line signal is at a logic high, and couples the gate of the word line underdrive p-channel transistor to ground when the initial word line signal is at a logic low.

Process and temperature compensated word line underdrive scheme for SRAM

A row decoder includes decoder logic generating an initial word line signal, and two inverters. The first inverter is formed by a first p-channel transistor having a source coupled to a supply voltage and a gate receiving the initial word line signal. The second inverter is formed by a first n-channel transistor having a drain coupled to a drain of the first p-channel transistor, a source coupled to a shared ground line, and a gate receiving the initial word line signal. An inverse word line signal is generated at the drain of the first n-channel transistor. A second inverter inverts the inverse word line signal to produce a word line signal. Negative bias generation circuitry generates a negative bias voltage on the shared ground line when the initial word line signal is logic high, and otherwise couples the shared ground line to ground.

High speed SRAM using enhance wordline/global buffer drive

A memory device includes a memory array powered between a virtual supply and virtual ground nodes. A dummy memory array is powered between first and second nodes. A virtual supply generation circuit generates a virtual supply voltage at the virtual supply node as a function of a first control voltage. A virtual ground generation circuit generates a virtual ground at the virtual ground node as a function of a second control voltage. A first control voltage generation circuit coupled between the first node and a power supply voltage generates the first control voltage as tracking retention noise margin (RNM) of the memory array, the first control voltage falling as the RNM decreases. A second control voltage generation circuit coupled between the second node and ground generates the second control voltage as tracking RNM of the memory array, the second control voltage rising as the RNM decreases.

Reduced retention leakage SRAM

Schemes, methods and examples for optimization of broadcast and multicast frame delivery when at least one client device in a basic service set (BSS) is in a power-save mode are described. A communication apparatus associated with a BSS receives a broadcast or multicast frame after a first Delivery Traffic Indication Map (DTIM). The communication apparatus transmits the broadcast or multicast frame to at least a first client device in the BSS, without buffering the broadcast or multicast frame for transmission following a second DTIM which is subsequent the first DTIM, while at least a second client device in the BSS is in a power-save mode.

Optimization of broadcast and multicast frame delivery in power-save mode

An embodiment circuit includes a first reference source configured to provide a first reference signal to an analog-to-digital convertor (ADC). The circuit also includes a filter coupled to an output of the first reference source and configured to filter the first reference signal to produce a filtered first reference signal. The circuit further includes a second reference source coupled to an output of the filter. The second reference source is configured to provide a second reference signal to the ADC, and the second reference signal is generated based on the filtered first reference signal.

Circuit and method for generating reference signals for hybrid analog-to-digital convertors

Read stability of a memory is enhanced in low voltage operation mode by selectively boosting a cell supply voltage for a row of memory cells. The boosted voltage results from a capacitive coupling to the word line in that row. The capacitive coupling is implemented by running the metal line of the power supply line for the cell supply voltage and the metal line for the word line adjacent to each other in a common metallization level. The selective voltage boost is controlled in response to operation of a modified memory cell exhibiting a deteriorated write margin. An output of the modified memory cell is compared to a threshold to generate a signal for controlling the selective voltage boost. Word line under-voltage circuitry is further provided to control application of an under-voltage to the word line.

Method and apparatus for enhancing read stability of a static random access memory circuit in low voltage operation

An embodiment circuit includes an operational amplifier having a first output terminal and a second output terminal. The circuit further includes a detector coupled between the first output terminal and the second output terminal of the operational amplifier. The detector is configured to detect a common-mode output voltage at the first output terminal and the second output terminal of the operational amplifier. The circuit also includes a feedback amplifier having a first input terminal coupled to the detector and a second input terminal configured to receive a reference voltage. The feedback amplifier is configured to generate a feedback signal based on the common-mode output voltage and the reference voltage and to provide the feedback signal to the operational amplifier. The circuit additionally includes an impedance element having a first terminal coupled to the first input terminal of the feedback amplifier and a second terminal coupled to a supply voltage.

Common-mode feedback for differential amplifier

A memory circuit includes a wordline, memory cells connected to the wordline and a wordline driver circuit including a p-channel pull-up transistor. The memory circuit further includes a read assist circuit including an n-channel pull-down transistor having a source-drain path connected between the wordline and a ground node and an n-channel diode-connected transistor having a source-drain path connected between a positive supply node and a gate terminal of the n-channel pull-down transistor. The n-channel diode-connected transistor is configured to apply a biasing voltage to the gate terminal of the n-channel pull-down transistor that is a relatively lower voltage for relatively lower temperatures and a relatively higher voltage for relatively higher temperatures.

Temperature compensated read assist circuit for a static random access memory (SRAM)

An embodiment ADC device includes a plurality of comparator elements, each comparator element of the plurality of comparator elements having a first input connected to an input port, each comparator element of the plurality of comparator elements having a second input port connected to a reference signal port. The ADC device further has a switch matrix having routing circuitry connected to an output of each comparator of the plurality of comparators, and a plurality of latches, with each latch of the plurality of latches having an input connected to the routing circuitry. The routing circuitry is configured to connect the output of each comparator of the plurality of comparators to an input of each latch of the plurality of latches according to one or more signals received at one or more control ports.

Analog-to-digital converter with dynamic element matching

A sense amplifier enable signal generating circuit includes an input coupled to a dummy bit line of a memory. A voltage comparator circuit compares a voltage on the dummy bit line to a threshold voltage and generates an output signal when the voltage falls below that threshold voltage. A multi-bit counter circuit counts a count value in response to the output signal. A pull-up circuit pulls up the voltage on the dummy bit line in response to the output signal. A count comparator circuit compares the count value to a count threshold and generates a sense amplifier enable signal when the count value equals the count threshold.

Circuit for generating a sense amplifier enable signal with variable timing

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Ranchi, India

Ashish Kumar