Applied Materials, Inc.

Intel Corporation

Dell Products Inc.

Ashish Goel

Anantha K Subramani

Hanbing Wu

Wei W Wang

Chi Hong Ching

Deepak Jadhav

Philip Allan Kraus

Shimin Mao

Rongjun Wang

Xiaoxiong Yuan

Prashanth Kothnur

Srinivas Guggilla

Bharath Swaminathan

Maurice E Ewert

Simon Huang

Lavinia Nistor

Er-Xuan Ping

Joseph Michael Ranish

Randhir P S Thakur

Vijay D Parkhe

Kelvin Chan

Michael D Willwerth

Vijay Parihar

Joung Joo Lee

Kaushal Kishore Singh

Leonard Michael Tedeschi

Yaoling Pan

Denis M Koosau

John Joseph Mazzocco

Xiaodong Wang

Patrick John Tae

Ashutosh Agarwal

Vijaykumar Krithivasan

Martin Perez-Guzman

Chih-shun Lu

Anantha Subramani

Suresh Gupta

David M Hasseler

Martin Kerrigan

A substrate support assembly includes a plate structure and an insulator structure. The plate structure includes an upper plate and a lower plate. The lower plate includes a lower plate structure surface. The insulator structure is disposed beneath the plate structure. The insulator structure includes a lower insulator structure surface and an upper insulator structure surface. A first portion of the upper insulator structure surface is recessed with respect to a second portion of the upper insulator structure surface. The first portion of the upper insulator structure surface forms an interior volume with the lower plate structure surface.

High-temperature substrate support assembly with failure protection

An apparatus comprises at least one processing device configured to monitor, by a first service in a service chain, a first set of processing queues comprising two or more different processing queues associated with two or more different priority levels. The processing device is also configured to process, by the first service, a given portion of data stored in at least one of the two or more different processing queues in the first set of processing queues. The processing device is further configured to determine prioritization information associated with the given portion of the data and to select, based on the prioritization information, a given one of two or more different processing queues in a second set of processing queues associated with a second service in the service chain, and to store the given portion of the data in the given processing queue in the second set of processing queues.

Data transfer prioritization for services in a service chain

A cooling chamber comprising a support plate connected to a cryo pump and turbo pump, a clamp ring with a plurality of clamp pads on the bottom thereof where each clamp pad has a beveled surface directed downward and a lift plate to move the clamp ring from a clamp position to a loading position are described. Cluster tools incorporating the cooling chamber and methods of using the cooling chamber are also described.

UHV in-situ cryo-cool chamber

A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

Deposition system with multi-cathode and method of manufacture thereof

Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

Resonant process monitor

Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.

Methods and apparatus for co-sputtering multiple targets

Embodiments of a process kit for use in a multi-cathode process chamber are disclosed herein. In some embodiments, a process kit includes a rotatable shield having a base, a conical portion extend downward and radially outward from the base, and a collar portion extending radially outward from a bottom of the conical portion; an inner deposition ring having a leg portion, a flat portion extending radially inward from the leg portion, a first recessed portion extending radially inward from the flat portion, and a first lip extending upward from an innermost section of the first recessed portion; and an outer deposition ring having a collar portion, an upper flat portion disposed above and extending radially inward from the collar portion, a second recessed portion extending inward from the upper flat portion, and a second lip extending upward from an innermost section of the second recessed portion.

Process kit for multi-cathode processing chamber

Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.

Methods and apparatus for multi-cathode substrate processing

Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

Processing tool having a monitoring device

In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

Cooled reflective adapter plate for a deposition chamber

In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the first annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

Apparatus for improving temperature uniformity across a substrate are provided herein. In some embodiments, a deposition ring for use in a substrate processing system to process a substrate may include an annular body having a first surface, an opposing second surface, and a central opening passing through the first and second surfaces, wherein the second surface is configured to be disposed over a substrate support having a support surface to support a substrate having a given width, and wherein the opening is sized to expose a predominant portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect heat energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface.

Reflective deposition rings and substrate processing chambers incorporating same

Growing community of inventors

Bengaluru, India

Ashish Goel