Omnivision Technologies, Inc.

Google Inc.

Ashish A Shah

Howard E Rhodes

Duli Mao

Hsin-Chih Tai

Vincent Venezia

Gang Chen

Yin Qian

Rongsheng Yang

Renzo De Nardi

Johnny Hsienchow Lee

Sohei Manabe

Hidetoshi Nozaki

Johnny Chung Lee

Joel Hesch

James Fung

Wei Dong Qian

William Qian

WeiDong Qian

Sasidhar Saladi

Nagaraja Satyadev

Hsin-Chih (Dyson) Tai

Alan Beltran

Howard M Rhodes

A head mounted display (HMD) adjusts feature tracking parameters based on a power mode of the HMD. Examples of feature tracking parameters that can be adjusted include the number of features identified from captured images, the scale of features identified from captured images, the number of images employed for feature tracking, and the like. By adjusting its feature tracking parameters based on its power mode, the HMD can initiate the feature tracking process in low-power modes and thereby shorted the time for high-fidelity feature tracking when a user initiates a VR or AR experience at the HMD.

Low-power mode feature identification at a head mounted display

A head mounted display (HMD) device includes first and second laterally-curved displays disposed about a medial plane, wherein each of the first and second curved displays includes a first lateral section distal from the medial plane and having a curvature with a first radius and a second lateral section adjacent to the medial plane and having a curvature with a second radius less than the first radius.

Head mounted display device with dual curved displays

A user portable device includes a device chassis comprising at least one opening at a surface of the device chassis and a sensor assembly aligned with the at least one opening. The sensor assembly includes a mounting structure and a plurality of sensors mounted to the mounting structure. The sensors include at least two sensors utilized by the user portable device based on a specified geometric configuration between the at least two sensors. The user portable device further includes a mounting fastener that mounts the sensor assembly to the device chassis so as to isolate the sensor assembly from deformation of the surface of the device chassis along one or more axes during user handling, and thus aid in preventing alteration of a baseline geometric configuration of one or more sensors of the sensor assembly due to the chassis deformation.

User portable device having floating sensor assembly to maintain fixed geometric configuration of sensors

Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate). In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.

Dual-facing camera assembly

An apparatus includes a photodiode, a first and second storage transistor, a first and second transfer transistor, and a first and second output transistor. The first transfer transistor selectively transfers a first portion of the image charge from the photodiode to the first storage transistor for storing over multiple accumulation periods. The first output transistor selectively transfers a first sum of the first portion of the image charge to a readout node. The second transfer transistor selectively transfers a second portion of the image charge from the photodiode to the second storage transistor for storing over the multiple accumulation periods. The second output transistor selectively transfers a second sum of the second portion of the image charge to the readout node.

Circuit configuration and method for time of flight sensor

An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

Multilayer image sensor pixel structure for reducing crosstalk

An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate.

Self-aligned filter for an image sensor

An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.

Image sensor with buried self aligned focusing element

An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.

High dynamic range sensor with blooming drain

An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region.

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Milpitas, CA, United States of America

Ashish A Shah