Simon Fraser University

Ash M Parameswaran

Marek Syrzycki

Bahram Ghodsian

Methods for forming field emission and/or field ionization structures with self-aligned gate electrode structures involve forming a cavity in a first face of a substrate and forming an oxide layer in the cavity. The oxide layer forms a mold for making a sharp field emission tip which will be exposed on a second face of the substrate. In a first method a gate electrode is formed in the substrate. The gate electrode is automatically spaced apart from and insulated from the tip by the oxide layer. The gate electrode may comprise a doped region in the substrate. In a variant method, a gate electrode is formed in a thin metal film deposited on the second face of the substrate. A photoresist mask is created by shining ultraviolet light on the first face of the substrate to expose the underside of a layer of photoresist deposited on the metal film in an area adjacent the tip mold. The mask is automatically aligned with the tip mold.

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Port Moody, Canada

Ash M Parameswaran