Axcelis Technologies, Inc.

Applied Materials, Inc.

Lam Research Corporation

Other

Eaton Corporation

Varian Semiconductor Equipment Associates, Inc.

Aseem Kumar Srivastava

William F DiVergilio

Herbert H Sawin

Richard E Pingree, Jr

Thomas James Buckley

Palanikumaran Sakthivel

Palanikumaran Sakthievel

Qintao Zhang

Carlo Waldfried

Hans-Joachim Ludwig Gossmann

Wei Zou

Mohammad Kamarehi

Jun Seok Lee

Michael B Colson

Robert D Wooten

Alan Frederick Becknell

Supakit Charnvanichborikarn

David Ferris

William R Bogiages, Jr

Victor Pellicier

Robert P Couilliard

Wei Zhao

Ilwoong Koo

A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.

System and method for hi-precision ion implantation

A method of forming an electrically insulating barrier between a source contact and a drain contact of a transistor device including an electrically insulating layer disposed atop a semi-conductive layer, and an electrically conductive layer disposed atop the electrically insulating layer, the source contact and the drain contact extending from the electrically conductive layer through the electrically insulating layer to the semi-conductive layer, the method including disposing a hardmask layer atop the electrically conductive layer, disposing a photoresist layer atop the hardmask layer, performing a photolithography process to form a trench in the hardmask layer to expose an underlying portion of the electrically conductive layer spanning between the source contact and the drain contact, and performing an ion implantation process, wherein an ion beam formed of ionized oxygen atoms is directed into the trench to oxidize the exposed portion of the electrically conductive layer.

Method for isolating gates in transistors

Methods of decreasing the dose per pulse implanted into a workpiece disposed in a process chamber are disclosed. According to one embodiment, the plasma is generated by a RF power supply. This RF power supply may have two different modes, a first, referred to as continuous wave mode, where the RF power supply is continuously outputting a voltage. This mode allows creation of the plasma within the process chamber. During the second mode, referred to as pulsed plasma mode, the RF power supply outputs two different power levels. The platen bias voltage may be a more negative value when the lower RF power level is being applied. This pulsed (or multi-setpoint) plasma also assists in reducing dopant deposition on the wafer during the time when CW plasma is on but the bias voltage pulse is in the off-state. In a further embodiment, a delay is introduced between the transition to the pulsed plasma mode and the initiation of the implanting process. In yet another embodiment the plasma is generated at a location in the chamber more judicious to reducing the dose impinging on the wafer, thereby increasing the process time to allow adequate control of the process.

Method for implementing low dose implant in a plasma system

The present disclosure is directed towards a method and apparatus for generating an abatement plasma downstream of a processing chamber using an RF plasma ignited and sustained with an integrated power oscillator circuit driven by feedback based upon a load of the abatement plasma. In one embodiment, a plasma ashing system includes an abatement system configured to receive an effluent byproduct from an upstream processing chamber containing a workpiece. The effluent byproduct is provided along an exhaust conduit to a downstream afterburner unit having an integrated power oscillator, that relies upon an oscillating circuit operatively coupled to an antenna to ignite the abatement plasma within the exhaust conduit. The antenna, together with the plasma load, form a resonant tank circuit, which provides a feedback that drives operation of the oscillating circuit, thereby allowing the oscillating circuit to vary its output based upon changes in the abatement plasma load.

RF coupled plasma abatement system comprising an integrated power oscillator

A continuously variable microwave circuit capable of being tuned to operate under a plurality of distinct operating conditions, comprising: a waveguide comprising an adjustable tuning element having a core configured to protrude into the waveguide; an actuator in operative communication with the adjustable tuning element, wherein the actuator is operable to selectively vary a length of the core that is protruding into the waveguide so as to minimize reflected microwave power in the plasma asher; and a controller in operative communication with the actuator, wherein the controller is configured to selectively activate the actuator upon a change in the plurality of operating conditions.

Tuning hardware for plasma ashing apparatus and methods of use thereof

A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith

A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials.

Plasma ashing apparatus and endpoint detection process

A baffle plate assembly for distributing gas flows into an adjacent process chamber containing a semiconductor wafer to be processed includes a planar gas distribution portion having a plurality of apertures therein; a flange surrounding the gas distribution portion; and an impingement device centrally attached to the gas distribution portion, wherein the device includes a cap and a stem, the stem being in thermal contact with the gas distribution portion. Also disclosed herein are plasma reactors employing the baffle plate assembly and methods for reducing recombination of species in a plasma.

Gas distribution plate assembly for plasma reactors

An antenna array for a radio frequency plasma process chamber including, an array of electrodes, an array of dielectric tubes concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of each electrode tube and an inner surface of the corresponding dielectric tube, and a hermetic seal between each dielectric tube and the plasma process chamber configured to allow a vacuum or low pressure in the plasma process chamber.

Wide area radio frequency plasma apparatus for processing multiple substrates

A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.

Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing

A contact measurement probe for measuring a temperature of a substrate in a process environment includes a probe head having a contact surface made of a ceramic material or a polymeric material for contacting the substrate. The contact measurement probe eliminates electrical biasing effects in process environments that include an ion source, thereby providing greater accuracy and reproducibility in temperature measurement.

Contact temperature probe and process

Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing

A dual plasma source (,) is provided for a plasma processing system (,), comprising a first plasma source (,) and a second plasma source (,). The first plasma source (,) has a first plasma passageway (,) for transporting a first plasma therethrough toward a processing chamber (,), the first plasma passageway providing a first inlet (,) for accepting a first gas mixture to be energized by the first plasma source. The second plasma source (,) is connected to the first plasma source (,) and has a second plasma passageway (,) for transporting a second plasma therethrough toward the processing chamber (,), the second plasma passageway providing a second inlet (,) for accepting a second gas mixture to be energized by the second plasma source. The first plasma passageway (,) is constructed from a material that resists atomic oxygen recombination with the first plasma, and the second plasma passageway (,) is constructed from a material that resists etching by the second plasma. In a more limited embodiment, the first plasma passageway (,) is constructed from quartz (SiO,) and the second plasma passageway is (,) constructed from alumina (Al,O,) or single crystal alumina (sapphire).

Dual plasma source for plasma process chamber

A plasma discharge device and method for removing material from a substrate having dynamic tuning, which permits operation with a variety of process gasses over a range of operating conditions. A longitudinally extending microwave cavity is defined at the ends by microwave traps, the positions of which are longitudinally adjustable to provide dynamic tuning. An adjustable antenna is provided, and operation utilizes the TM.sub.012 mode.

Plasma discharge device with dynamic tuning by a movable microwave trap

An apparatus for cooling an electrodeless lamp including a supersonic outlet jet for providing a stream of cooling gas. A common manifold including mounting elements for a plurality of conduits of equal length for transporting cooling gas, wherein the mounting elements are at staggered elevational positions so that the conduits provide cooling gas in the vicinity of lamp envelope at different elevational positions.

Growing community of inventors

Germantown, MD, United States of America

Aseem Kumar Srivastava