Ngk Spark Plug Company, Limited

Nkg Spark Plug Co., Ltd.

Asao Morikawa

Kazuo Kondo

Tsuneyuki Sukegawa

Hiroshi Iwata

Hisaharu Shiromizu

Kazunori Miura

Yoshimasa Shibata

A multilayered substrate is disclosed comprising a first layer of relatively dense crystalline glass, and a second layer of a porous crystalline glass characterized by a relatively low dielectric constant bonded to the first layer. The crystalline glass in both layers is of substantially the same composition.

Multilayered glass substrate

A method of forming a substrate for electronic devices by forming a mixture of a liquid vehicle, crystalline glass powder and carbon powder into a slurry. The slurry is then formed into a desired shape and heated in an oxidizing atmosphere at a temperature less than 900.degree. C. for a time sufficient to oxidize the carbon powder and partially sinter the crystalline glass to form the porous substrate having closed porosity.

Process of making a coated substrate having closed porosity

A high heat-conductive, thick film multilayered circuit board for high speed signal transmission in a high frequency region has a substrate having high heat conductivity. An oxidized layer is formed on a surface of the substrate. Electrically conductive layers formed of a printed paste containing crystallized glass, and insulating layers formed of a printed insulating paste containing crystallized glass as a principal constituent are alternately disposed by printing on the oxidized layer of the substrate. The conductive and insulating layers are heated to form solid layers between successive printing steps. The substrate is AlN, Sic/BeO, SiC, Cu/W and/or ZrB.sub.2 having a heat conductivity of 40-140 W/m.multidot.k at room temperature. The layers have high adhesion strength to the substrate and the insulting layer has a low dielectric constant.

Process for making a high heat-conductive, thick film multi-layered

A process for producing a ceramic sintered body having a metallized via hole previously formed after lamination of the ceramics is disclosed and said process comprises immersing in a first liquid a ceramic semi-sintered body formed through heating at 500 to 900.degree. C. and having a large number of pores and a straight via hole, thereby to allow the first liquid to penetrate into the pores of the semi-sintered body, subsequently immersing the resulting semi-sintered body in a suspension of electrically conductive powder particles having an average particle size of 2 to 3 .mu.m in a second liquid incompatible with the first liquid, thereby to fill the via hole with the suspension, and then sintering the resulting semi-sintered body in a non-oxidizing atmosphere.

Process for producing ceramic sintered body having metallized via hole

A composition for metalizing low temperature-fired ceramics according to the invention includes: a combination of two or three oxides selected from the group consisting of 1 to 8 percent by weight of bismuth(III) oxide (Bi.sub.2 O.sub.3), 0.1 to 5 percent by weight of MoO.sub.3, and 0.1 to 2 percent by weight of Cr.sub.2 O.sub.3 as well as a primary constituent, that is, mixture of copper (Cu) and copper(II) oxide (CuO) or mixture of copper(II) oxide (CuO) and copper(I) oxide (Cu.sub.2 O). The additives of the invention efficiently keep the resultant metalized layer out of cracks and prevent local sintering and burr of the metalized layer.

Composition for metalizing ceramics

A substrate having a low dielectric constant for use with electronic devices consisting essentially of porous crystalline glass. The composition of the crystalline glass is represented by the formula X-Al.sub.2 O.sub.3 -SiO.sub.2, where X is one or more of the metal oxides ZnO, MgO, Li.sub.2 O, ZrO.sub.2, B.sub.2 O.sub.3, P.sub.2 O.sub.5, Y.sub.2 O.sub.3 and BaO. The crystalline glass may also include a filler material such as a ceramic powder or non-glass material. The substrate initially has a particle size of approximately 5 microns or less, which provides a high mechanical strength to the substrate even at high porosities.

Low-temperature baked substrate

High heat-conductive, thick film multilayered circuit board for high speed signal transmission in a high frequency region, the circuit board comprising: a substrate having high heat conductivity; an oxidized layer formed on a surface of said substrate; an electrically conductive layer formed of a printed paste containing therein crystallized glass; and an insulating layer formed of a printed insulating paste comprised of crystallized glass as a principal constitutent, wherein at least one of said conductive layer and at least one of said insulating layer are alternately disposed by printing on the oxidized layer of said substrate, and said conductive and insulating layers have been heated to form solid layers. The substrate is AlN, SiC/BeO, SiC, Cu/W and/or ZrB.sub.2 having a heat conductively of 40-140 W/m.multidot.k at room temperature. The layers have high adhesion strength to the substrate and the insulating layer has a low dielectric constant.

High heat-conductive, thick film multi-layered circuit board

A metallizing composition for use with ceramics which comprises 100 parts by weight of a CuO-Cu combination consisting of 30 to 70 wt % CuO and 70 to 30 wt % Cu, at least one inorganic component selected from the group consisting of not more than 10 parts by weight of MnO.sub.2, not more than 7 parts by weight of Pt and not more than 5 parts by weight of Au, an organic binder, and a solvent.

Metallizing composition for use with ceramics

A ceramic substrate is described, which comprises a fired ceramic sheet that has on its surface a metallized layer made of Au or Cu, or Au-Pt, Au-Pd, Cu-Pt or Cu-Pd alloy that is overlaid with a Ni plating layer.

Ceramic substrate

Metallizing composition for use in ceramics, comprises 100 parts by weight of a CuO-Cu combination consisting of 30-70 wt % CuO and 70-30 wt % Cu, at least one inorganic component selected from not more than 10 parts by weight of MnO.sub.2, not more than 7 parts by weight of Pt and not more than 5 parts by weight of Au, an organic binder and a solvent, wherein the Cu particles have a size in the range of 0.5-20 .mu.m and consist of at least two classes of particles having different average sizes.

A metallizing composition is described that comprises 100 parts by weight of Au powder, from 2 to 7 parts by weight of CuO powder, from 0.3 to 2 parts by weight of a glass-based inorganic powder free from PbO, and from 3 to 8 parts by weight of a resin.

Metallizing composition

A device for connecting a metal conductor on a surface of a first ceramic body to an outer terminal in which dispersion of copper metal into adjoining layers is prevented. An outer surface conductor made of Cu or Au is connected to the metal conductor on the surface of the ceramic body and extends through a throughhole in a second ceramic body. A lower conductive layer of Pd is formed over and in electrical connection with the outer end of the outer surface conductor, the lower layer having an area greater than the area of the outer end of the outer surface conductor. A dispersion-preventing layer is formed on a portion of the lower layer concentric with the outer end of the outer surface conductor, the dispersion-preventing layer having an area greater than the area of the outer end of the outer surface conductor but less than the area of the lower layer. The dispersion-preventing layer is made of a crystallized glass material. An upper conductive layer is formed over the dispersion-preventing layer and a portion of the lower layer, the upper conductive layer having an area greater than the area of the dispersion-preventing layer but less than the area of the lower layer. A soldering layer formed over the upper layer and a portion of the lower layer in electrical contact with the upper layer and the lower layer, the outer terminal being connected to the soldering layer.

Connection structure between ceramic body and outer terminal

Metallizing paste is composed, by weight, of 100 parts of Pt, 0.5 to 5 parts of Ag, 0.1 to 1 part of CuO, and 2 to 10 parts of a low thermal expansion fritt, which may also contain up to 100 parts of Au. Another metallizing paste is composed, by weight, of 100 parts of Pd, 0.5 to 4 parts of Ag, 0.1 to 1 part of CuO, and 1 to 10 parts of a low thermal expansion fritt, which may also contain up to 50 parts of Au. A low thermal expansion circuit board with multi-layers is made up to a low thermal expansion substrate such as crystallized glass, A1N, SiC, Si.sub.3 N.sub.4 etc. and metallized layers formed on the surface of the substrate based on the abovementioned metallizing pastes comprising crystallized glass type materials.

Metallizing paste for circuit board having low thermal expansion

A ceramic substrate for an electrical device such as a layered circuit or an integrated circuit formed of a crystalline glass or ceramic material having a low densifying temperature such that conductor materials and circuits can be readily formed from high conductivity metals.

Ceramic substrate for electrical devices

The invention relates to a hermetically sealed ceramic package for an electric or electronic device, the package using a low temperature fired ceramic or glass-ceramic as the material of the package base supporting the device. The hermetically sealing joint between the package base and a ceramic cap is provided by metallizing the opposite surfaces of the base and the cap with Cu, plating the Cu metallized layer of each member with a metal not alloyable with Cu or Ag, such as Ni or Pd for example, plating that metal layer with Au and brazing the Au layer of the cap to the Au layer of the base with Au-Sn eutectic alloy. Since the Au layers are respectively shielded from the Cu metallized layers by the non-alloyable metal layers, the brazing operation to form the sealing layer of Au-Sn is accomplished without suffering from deterioration of the Au-Sn seal by intrusion of melted Cu into the Au-Sn seal.

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Aichi, Japan

Asao Morikawa