Mitsubishi Electric Corporation

Asami Uchiyama

Takeshi Yamatoya

Koichi Akiyama

Yoshimichi Morita

Yusuke Azuma

A modulator-integrated semiconductor laser () includes a semiconductor laser (), an electro-absorption modulator (), and an optical attenuator () that are monolithically integrated. The electro-absorption modulator () and the optical attenuator () are connected in series in a stage succeeding the semiconductor laser (). A control unit () controls the DC bias voltage to be applied to the optical attenuator () to increase as temperature of the modulator-integrated semiconductor laser () rises.

Semiconductor laser device and method for manufacturing the same

A semiconductor optical element and an optical module in which extinction ratio variation among integrated optical modulation elements is reduced. An optical module has a wavelength multiplexer that multiplexes light respectively emerging from electric-field-absorption modulator (EAM) portions of integrated optical modulation elements, and that outputs the multiplexed light. The integrated optical modulation element has a signal input terminal, a laser element portion, and an EAM portion. Each of the integrated optical modulation elements has a difference between an oscillation wavelength and a barrier layer bandgap wavelength, represented as an LDBG wavelength difference. Variation of the LDBG wavelength differences is limited within a range of &#xb1;1 nm.

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Tokyo, Japan

Asami Uchiyama