Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Asako Hirai

Alvaro Gomez-Iglesias

Tobias Meyer

Philipp Drechsel

Bastian Galler

Anna Nirschl

Tobias Niebling

Matthias Peter

Peter Stauss

Thomas Lehnhardt

Juergen Off

Peter Stauß

Peter Strauß

In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first layer and the second layer, the semiconductor layer sequence having at least one injection region, wherein the first layer includes a first conductivity type, wherein the second layer includes a second conductivity type, wherein the semiconductor layer sequence includes the first conductivity type within the entire injection region, wherein the injection region, starting from the first layer, at least partially penetrates the active layer, wherein side surfaces of the semiconductor layer sequence are formed at least in places by the injection region, and wherein the injection region is configured to inject charge carriers directly into the active layer.

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

The invention relates to an optoelectronic semiconductor element () comprising a semiconductor layer sequence () with a first layer () of a first conductivity type, a second layer () of a second conductivity type, and an active layer () which is arranged between the first layer () and the second layer () and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element () is equipped with a plurality of injection regions () which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence () is doped within each injection region () such that the semiconductor layer sequence () has the same conductivity type as the first layer () within the entire injection region (). Each injection region () passes at least partly through the active layer () starting from the first layer (). Furthermore, each injection region () is laterally surrounded by a continuous path of the active layer (), the active layer () being doped less in the path than in the injection region () or oppositely thereto. During the operation of the semiconductor element (), charge carriers reach the injection regions () at least partly from the first layer () and are directly injected into the active layer () from there.

Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body

An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.

Optoelectronic semiconductor chip

The invention relates to a component () having a semiconductor layer sequence, which has a p-conducting semiconductor layer (), an n-conducting semiconductor layer (), and an active zone () arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers () having intermediate quantum well layers () and a plurality of n-side barrier layers () having intermediate quantum layers (). Recesses () having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

Component having a multiple quantum well structure

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.

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Wuppertal, Germany

Asako Hirai