Semiconductor Energy Laboratory Co., Ltd.

Asako Higa

Shunpei Yamazaki

Hidekazu Miyairi

Naoto Yamade

Kosei Nei

Yoshinori Ieda

Yoshinori Ando

Miki Suzuki

Yasutaka Suzuki

To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400&#xb0; C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300&#xb0; C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Semiconductor device and manufacturing method of the same

Growing community of inventors

Kanagawa, Japan

Asako Higa