International Business Machines Corporation

Rtx Corporation

Asa Frye

Christian Lavoie

Cyril Cabral, Jr

Andrew Herbert Simon

Renee Tong Mo

Mahadevaiyer Krishnan

Jay William Strane

Randolph F Knarr

Balasubramanian S Pranatharthi Haran

Horatio Seymour Wildman

Michael A Cobb

Andrew P Mansson

Ahmet Serkan Ozcan

Donald Rene Wall

Cristal Chan

Daniel L Becerra

A fibrous ceramic preform includes a plurality of ceramic fibers, a first amorphous layer, and an interfacial coating layer. The interfacial coating layer includes an anisotropic region adjacent the at least one amorphous layer, and an isotropic region on a side of the anisotropic region opposite the at least one amorphous layer.

Method to form aligned interface coating on silicon carbide fibers

Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers over at least one of a gate, a source, and a drain region of a field-effect-transistor (FET) through a physical vapor deposition (PVD) process, wherein the first metal layer is deposited using a first nickel target material containing platinum (Pt), and the second metal layer is deposited on top of the first metal layer using a second nickel target material containing no or less platinum than that in the first nickel target material; and annealing the first and second metal layers covering the FET to form a platinum-containing nickel-silicide layer at a top surface of the gate, source, and drain regions.

Nickel-silicide formation with differential Pt composition

The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire semiconductor structure which includes at least one gate stack region. An oxygen diffusion barrier comprising, for example, Ti, TiN or W is deposited over the structure to prevent oxidation of the metals. An annealing step is then employed to cause formation of a NiSi, PtSi contact in regions in which the metals are in contact with silicon. The metal that is in direct contact with insulating material such as SiOand SiNis not converted into a metal alloy silicide contact during the annealing step A. selective etching step is then performed to remove unreacted metal from the sidewalls of the spacers and trench isolation regions.

Method and process for forming a self-aligned silicide contact

Embodiments of the present invention provide a method that cools a substrate to a temperature below 10&#xb0; C. and then implants ions into the substrate while the temperature of the substrate is below 10&#xb0; C. The implanting causes damage to a first depth of the substrate to create an amorphized region in the substrate. The method forms a layer of metal on the substrate and heats the substrate until the metal reacts with the substrate and forms a silicide region within the amorphized region of the substrate. The depth of the silicide region is at least as deep as the first depth.

Low temperature ion implantation for improved silicide contacts

The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire semiconductor structure which includes at least one gate stack region. An oxygen diffusion barrier comprising, for example, Ti, TiN or W is deposited over the structure to prevent oxidation of the metals. An annealing step is then employed to cause formation of a NiSi, PtSi contact in regions in which the metals are in contact with silicon. The metal that is in direct contact with insulating material such as SiOand SiNis not converted into a metal alloy silicide contact during the annealing step. A selective etching step is then performed to remove unreacted metal from the sidewalls of the spacers and trench isolation regions.

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Lagrangeville, NY, United States of America

Asa Frye