Micron Technology Incorporated

Arvind Muralidharan

Michele Piccardi

James I Esteves

Theodore T Pekny

June Lee

Scott Anthony Stoller

Qisong Lin

Jun Shen

Shuai Xu

Pinchou Chiang

Hari Giduturi

Nicholas T Hendrickson

Xinwei Guo

In a memory sub-system, causing a standby circuit associated with a memory device to enter into a low power mode. In the low power mode, causing a reference voltage to be supplied to a voltage regulator, wherein the reference voltage causes the voltage regulator to supply a standby current level to the memory device, where the standby current level is lower than a current level supplied when the memory device is in an active mode.

Low power management for sleep mode operation of a memory device

A determination is made that a memory device of a memory sub-system is to be transitioned to a sleep mode. A command is initiated to cause a standby circuit associated with the memory device to enter into a low power mode while a power supply of the memory sub-system is maintained in a powered state. In the low power mode, a reference voltage is supplied to a voltage regulator of the standby circuit to supply a standby current level to the memory device during the sleep mode.

A memory device includes a memory array comprising a plurality of wordlines and a regulator circuit selectively coupled to the plurality of wordlines, wherein the regulator circuit is configured to perform a detection routine to sample a load current from a selected wordline of the plurality of wordlines and generate a measured output voltage, wherein the measured output voltage modulates with respect to the load current. The memory device further includes a comparator circuit coupled to the regulator circuit, wherein the comparator circuit is configured to generate a comparison result based on a difference between the measured output voltage and a reference voltage and a local media controller coupled to the comparator circuit, wherein the local media controller is configured to identify a presence of a defect on the selected wordline in response to the comparison result satisfying a threshold condition.

Defect detection during program verify in a memory sub-system

Systems and methods of memory operation involving charge pump circuitry located on a die and coupled to external pump capacitors are disclosed. In one embodiment, an exemplary system may comprise a memory die containing a memory array and charge pump circuitry configured to generate a pump voltage supplied to the memory array, and one or more pump capacitors located external to the die and configured to hold stored charge that is used to generate the pump voltage. Some embodiments may include a tank capacitor, also located off-die, to condition the charge provided from the pump capacitor. According to further embodiments, the charge pump circuitry may include one or both of max current control circuitry and/or switch resistance control circuitry that may be utilized, for example, to adjust peak current.

Systems and methods involving charge pumps coupled with external pump capacitors and other circuitry

Apparatus and methods for evaluating leakage currents of capacitances are described. Capacitances having excessive leakage currents may be disabled from use. An example apparatus includes a leakage detection circuit configured to be coupled to a capacitance block. The leakage detection circuit is configured to determine whether a leakage current of a capacitance of the capacitance block exceeds a current limit and is further configured to provide an output indicative of a status of the capacitance. A detection controller is coupled to the leakage detection circuit and a register, and the detection controller is configured to store data in the register indicative of the status of the capacitance based at least in part on the signal from the leakage detection circuit.

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Folsom, CA, United States of America

Arvind Muralidharan