Qualcomm Incorporated

Arvind Jain

Madan Krishnappa

Hong Dai

Rahul Gulati

Roberto Averbuj

Pranjal Bhuyan

Nishi Bhushan Singh

Divya Gangadharan

Rakesh Kumar Kinger

Swayam Pattnaik

Muhammad Nasir

Amir Borovietzky

Massine Bitam

Anju George

A system for repairing a random access memory may include serial test interface logic, fuse-sense logic, a repair data register chain, and multiplexing logic. The repair data register chain may include serially interconnected data registers configured to shift data through the repair data register chain. Each data register of the repair data register chain may have a data output configured to be coupled to a repair information input of the random access memory. The multiplexing logic may be configured to provide a soft-repair mode and a hard-repair mode. When the soft-repair mode is selected, the multiplexing logic may be configured to receive soft-repair data provided by the serial test interface logic into the data registers. When the hard-repair mode is selected, the multiplexing logic may be configured to receive the data provided by the fuse-sense logic into the data registers.

Memory repair system and method

An aspect of the disclosure relates to an integrated circuit (IC). The IC includes a first set of test clock controllers (TCCs) including a first set of clock outputs, respectively; and a first set of functional cores including a first set of clock inputs coupled to the first set of clock outputs of the first set of TCCs, respectively.

Integrated functional and design for testability (DFT) clock delivery architecture

Disclosed are methods and apparatus for securely accessing and testing a double data rate (DDR) memory device. The apparatus includes a first memory test access port (TAP) configured to enable or disable access to at least one double date rate (DDR) memory device, a second memory TAP configured to enable or disable access to at least one non-DDR memory device, and a test controller configured to test the at least one DDR memory device via the first memory TAP or test the at least one non-DDR memory device via the second memory TAP. In an aspect, at least one non-DDR memory device contains proprietary information. Accordingly, access to the at least one non-DDR memory device via the second memory TAP is disabled when access to the at least one DDR memory device via the first memory TAP is enabled.

Dual tap architecture for enabling secure access for DDR memory test controller

A self-test controller includes a memory configured to store a test patterns, configuration registers, and a memory data component. The test patterns are encoded in the memory using various techniques in order to save storage space. By using the configuration parameters, the memory data component is configured to decode the test patterns and perform multiple built-in self-test on a multitude of test cores. The described techniques allow for built-in self-test to be performed dynamically while utilizing less space in the memory.

In-field self-test controller for safety critical automotive use cases

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San Diego, CA, United States of America

Arvind Jain