Corning Incorporated

Arvind Baliga

Dale C Flanders

Randal A Salvatore

A semiconductor electro-optical device such as a laser or modulator comprises a ridge of active and wave-guiding semiconductor layers extending between two facets. In the preferred embodiment, cavity length is relatively long, i.e., the facets are separated by greater than a millimeter. This lowers the current densities in the ridge for the same output beam power. Further, an oxygen-free passivation layer is continuously formed over at least one of the facets to prevent surface corrosion and avoid electrical surface traps. However, a standing-wave-shifted coating is further used on the facet with the passivation layer to reduce the electric field magnitude in the passivation layer.

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Winchester, MA, United States of America

Arvind Baliga