Institutt for Energiteknikk

Rec Solar Pte. Ltd.

Universitetet I Oslo

Instititt for Energiteknikk

Arve Holt

Alexander Ulyashin

Erik Sauar

Andreas Bentzen

Smagul Karazhanov

Martin Kirkengen

Werner O Filtvedt

Ornulf Nordseth

Werner Filtvedt

Hanne F Andersen

Asbjorn Ulvestad

Jan Petter Maehlen

Thomas Preston

Trygve Mongstad

Hallgeir Klette

Bengt Svensson

ØRnulf Nordseth

Jan Petter MÆHLEN

Alexander G Ulyashin

Method for producing a powder comprising particles () comprising amorphous, micro- or nano-crystalline Silicon nitride. The method comprises the steps of supplying a reactant gas () containing Silicon, and a reactant gas () containing Nitrogen, to a reaction chamber () of a reactor (), and heating said reactant gases () to a temperature in the range of 510° C. to 1300° C. which is sufficient for thermal decomposition or reduction of the reactant gases () to take place inside the reaction chamber () to thereby produce a powder of amorphous, micro- or nano-crystalline particles () comprising Silicon nitride (SiNx) in which the atomic ratio of Silicon to Nitrogen is in the range 1:0.2 to 1:0.9. The produced powder of particles () may be used to produce a film, an electrode, such as an anode, for a battery, such as a Lithium ion battery.

Method for producing a silicon nitride powder and battery comprising the powder

This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

Semiconducting component

Embodiments provide a gas distribution arrangement, a device for handling a chemical reaction comprising such a gas distribution arrangement and a method of providing a chemical reaction chamber with a gas. The distribution arrangement comprises a distribution plate for separating a chemical reaction chamber from a gas inlet area and having a first side arranged to face the chemical reaction chamber and a second side arranged to face the gas inlet area and comprising a set of through holes stretching between the first and the second side, where the first side of the plate comprises a first material surrounding the holes and having a first thermal conductivity, and the plate also comprises a second material forming a base structure also surrounding the holes and having a second thermal conductivity.

Gas distribution arrangement for a fluidized bed

The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.

Surface passivation of silicon based wafers

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Leirsund, Norway

Arve Holt