International Business Machines Corporation

Infineon Technologies Ag

The University of Alabama

The Administrators of the Tulane Educational Fund

Arunava Gupta

Supratik Guha

Ravi F Saraf

Nestor A Bojarczuk, Jr

Wolfgang Raberg

James Donahue

Nestor Alexander Bojarczuk, Jr

Stephen L Brown

Peter Richard Duncombe

Shanlin Pan

Joseph M Karasinski

Pravin Shinde

Brian W Hussey

Patricia R Fontenot

Xinwei Li

Belgacem Haba

Chanro Park

Rajiv V Joshi

Sampath Purushothaman

David Clifford Long

David Carroll Challener

David William Abraham

Lubomyr Taras Romankiw

Michael C Gaidis

Jonathan Zanhong Sun

Krishna Seshan

Stuart Stephen Papworth Parkin

Philip Louis Trouilloud

James Marc Leas

Ulrich Karl Klostermann

Mahesh Govind Samant

Gang Xiao

Kia-Seng Low

Joseph M Harvilchuck

James R Lloyd

Horatio Quinones

Wade Wai-Chung Tang

Keith F Beckham

Morris Shatzkes

Philippe P Lecoeur

Disclosed herein are precursor compounds, composite electrodes comprising the same, and methods of making and use thereof.

Composite electrodes and methods for the fabrication and use thereof

A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.

Magnetic random access memory (MRAM) device on thermally-sensitive substrate

Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same

A method of forming a magnetic memory device on a substrate includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, transferring the memory device to the substrate, and forming an organic transistor on the substrate prior to transfer of the magnetic memory device.

Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer

A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.

Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory

Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.

Magnetic tunnel junctions for MRAM devices

Magnetic tunnel junction devices can be fabricated using a two-step deposition process wherein respective portions of the magnetic tunnel junction stack are defined independently of one another.

Two-step magnetic tunnel junction stack deposition

A goniometer for performing scanning probe microscopy on a substrate surface is disclosed. The goniometer has a cantilever, having a cantilevered end and a supported end and a tip disposed at the cantilevered end of the cantilever. The goniometer also has a block disposed at the supported end of the cantilever. The block has at least one pair of piezoelectric layers, a pair of electrodes disposed about each individual piezoelectric layer such that varying a potential difference applied between the individual electrodes of a pair of electrodes causes the corresponding piezoelectric layer to deform, and a first insulating material disposed between the individual electrodes for insulating the individual electrodes from each other. The individual piezoelectric layers are deformed at different rates resulting in a deformity of the block and tilting of the cantilever and tip connected therewith. Also disclosed are methods of using the goniometer of the present invention to measure the interactive forces between two molecular structures using a scanning probe microscope equipped with a goniometer of the present invention.

Micro goniometer for scanning probe microscopy

A method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material.

Selective growth of ferromagnetic films

A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material

Selective growth of ferromagnetic films for magnetic memory, storage-based devices

A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive metal region that is formed within and from the metal nitride film by a thermal process driven by absorption of light having a predetermined wavelength. Single films comprised of AlN are also within the scope of this invention, wherein an Al trace or interconnect is formed by laser radiation of wavelength 248 nm so as to contact circuitry that exists under the film. Multilayered stacks of films are also within the scope of the teachings of this invention. In this case each film layer may be separately deposited and then illuminated to selectively form the desired electrical connection(s), which may also connect to conductive feature(s) in an underlying layer, or a plurality of metal nitride layers are stacked bottom to top in order of increasing electronic band gap energy value, and then the conductive features are written into selective ones of the layers by controlling the wavelength of the light to be absorbed in a desired layer. The teachings of this invention can be employed to fabricate fuses and anti-fuses enabling selective circuit customization, test and repair. Also disclosed is a technique for forming electrical resistors in a metal nitride layer by adjusting the electrical resistance of the metallization formed from the metal nitride film layer.

Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair

A storage media for storing information having a substrate. The substrate has an upper surface and a molecular weight greater than 5,000. Preferably the material is a polymer. The material has a plurality of piles of molecular chains in selected areas formed by pushing the molecular chains of the material on its upper surface to the selected area mechanically with a mechanical tool. The piles represent written information. The mechanical tool is preferably an atomic force microscope. Another aspect of the present invention is a method for storing information having the steps of selecting a material substrate having an upper surface and pushing molecules on the upper surface into a molecular pile at selected locations.

Ultra high density storage media and method thereof

A process for cheaply fabricating a substantially single crystal or a polycrystalline semiconductor structure on a host substrate. The process begins by depositing a layer of wide band gap nitride material,, such as gallium nitride, aluminum nitride and/or indium nitride, on a sapphire substrate,. The semiconductor structure 14 is then grown on the nitride layer. Next, the host substrate,is attached with a bonding agent to an exposed surface area of the semiconductor structure,. The sapphire substrate is lifted off by irradiation in which nitrogen is dissociated from the nitride layer.

Product and process for forming a semiconductor structure on a host substrate

A storage device and a method of forming a storage device, includes depositing a metal layer on a substrate, and oxidizing the metal layer to form an oxide with a rutile structure on which a ferromagnetic material is selectively grown. The substrate may be substantially formed of either SiO.sub.2, Si.sub.3 N.sub.4, or a compound of SiO.sub.2 and Si.sub.3 N.sub.4. In another method, a method of forming a magnetic device, includes one of seeding a surface with one of Ti, Sn, and Ru islands having nanometer dimensions, and by exposing nanometer scale areas of the one of Ti, Sn, and Ru on a substrate, and coating the one of Ti, Sn, and Ru, with a ferromagnetic material. The surface may be substantially formed of either SiO.sub.2, Si.sub.3 N.sub.4, or a compound of SiO.sub.2 and Si.sub.3 N.sub.4. Similarly, the substrate may be substantially formed of either SiO.sub.2, Si.sub.3 N.sub.4, or a compound of SiO.sub.2 and Si.sub.3 N.sub.4.

High density magnetic recording medium utilizing selective growth of

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Valley Cottage, NY, United States of America

Arunava Gupta