Texas Instruments Corporation

Arun Gupta

William Craig McDonald

Lance W Barron

Adam Joseph Fruehling

Ivan Kmecko

Divyanshu Agrawal

Arthur Monroe Turner

John Charles Ehmke

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

MEMS electrostatic actuator device for RF varactor applications

A MEMS electrostatic actuator includes a bottom plate affixed to a substrate and a top plate suspended above the bottom plate. The top plate has a parallel plate center section and two rotating members electrically connected to the center section. Each rotating member is attached centrally of the rotating member for rotation about an axis of rotation to a set of anchor posts. The attachment includes at least one pair of torsional springs attached along each axis, each spring comprising a rectangular metal square that twists as the rotational members rotate. Electrostatic pull-down electrodes are underneath each rotational member.

MEMS electrostatic actuator

A MEMS mixer filter including an array of a multiplicity of resonator elements with conductive outer surfaces in a coplanar rectangularly tiled array, and two sets of DC bias lines in which alternating resonator elements in each row and column are connected to one or the other sets of bias lines so that laterally adjacent resonators may be biased to a DC potential. The resonator elements are uniform in size and shape. Lateral dimensions of the resonator elements are between 5 and 50 microns. The resonator elements are between 100 nanometers and 100 microns thick, and adjacent resonator elements are separated by a gap between 100 and 500 nanometers. A process of forming the MEMS mixer filter.

RF mixer filter MEMS resonator array

In accordance with one embodiment of the present disclosure, a semiconductor substrate includes complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate. An electrode is disposed outwardly from the CMOS circuitry. The electrode is electrically coupled to the CMOS circuitry. A resonator is disposed outwardly from the electrode. The resonator is operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode.

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Arun Gupta