University of California

Lawrence Livermore National Security, LLC

Arthur William Coombs, Iii

Jick Hong Yee

John William Sherohman

Kuang Jen J Wu

Vincenzo Lordi

Benjamin W Sturm

Paul Erhart

Daniel Aberg

In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25&#xb0; C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

Room temperature aluminum antimonide radiation detector and methods thereof

In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.

Thermal oxidation of single crystal aluminum antimonide and materials having the same

Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.

High resistivity aluminum antimonide radiation detector

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-&#x212b; family heterostructure devices.

Design and fabrication of 6.1-&#x212b; family semiconductor devices using semi-insulating A1Sb substrate

A heating and rotating specimen stage provides for simultaneous specimen heating and rotating. The stage is ideally suited for operation in ultrahigh vacuum (1.times.10.sup.-9 torr or less), but is useful at atmosphere and in pressurized systems as well. A specimen is placed on a specimen holder that is attached to a heater that, in turn, is attached to a top housing. The top housing is rotated relative to a bottom housing and electrically connected thereto by electrically conductive brushes. This stage is made of materials that are compatible with UHV, able to withstand high temperatures, possess low outgassing rates, are gall and seize resistant, and are able to carry substantial electrical loading without overheating.

Growing community of inventors

Patterson, CA, United States of America

Arthur William Coombs, Iii