University of Virginia Patent Foundation

Arthur Weston Lichtenberger

Robert M Weikle, Ii

Nicolas Scott Barker

Nathan Swami

Boris Gelmont

Tatiana Globus

Alexei Bykhovski

Theodore James Reck

Haiyong Xu

Lihan Chen

Ramakrishnan Parthasarathy

Linli Xie

Michael E Cyberey

Souheil Nadri

Ii Robert M Weikle

A probe chip device and a method for fabricating a probe chip device with an integrated diode sensor are disclosed. In one example, a probe chip device includes a beam head element that includes at least one probe tip that is configured to electrically probe a device under test. The probe chip device further includes a diode sensor that is heterogeneously integrated on the beam head element and is proximally positioned to the at least one probe tip.

System and method for integrating diode sensors on micromachined wafer probes

A micromachining process to fabricate a single chip that simple drops into a supporting structure. The micromachining process provides the ability to create a probe that will interface with integrated circuits, for example, operating at frequencies in the range of about 100 GHz to about 3,000 GHz (3 THz). This approach creates a silicon structure (or other applicable choice of material) that provides mechanical force for probing while supporting the transfer of the high frequency energy between a measurement system and the integrated circuit, individual device or material.

Micromachined on-wafer probes and related method

A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.

Method of local electro-magnetic field enhancement of terahertz (THZ) radiation in sub-wavelength regions and improved coupling of radiation to materials through the use of the discontinuity edge effect

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Charlottesville, VA, United States of America

Arthur Weston Lichtenberger