Infineon Technologies Ag

Infineon Technologies Austria Ag

Arthur Unrau

Kirill Trunov

Alexander Heinrich

Konrad Roesl

Ulrich Wilke

Achim Muecke

Joerg Schadewald

Frederick Groepper

Elmar Kuehle

Ulrich Nolten

Regina Nottelmann

Jens Krugmann

Carsten Ehlers

Andre Wedi

Johannes Uhlig

Tobias Buehner

Szabolcs Barna

Norbert Kanvasi

Waltraud Eisenbeil

Konrad Rösl

An electronic device includes a substrate including first and second metal regions, a first passive device that includes a metal joining surface and is arranged on the substrate with the metal joining surface of the first passive device facing first metal region, a semiconductor die that includes a metal joining surface and is arranged on the substrate with the metal joining surface of the semiconductor die facing the second metal region, a first soldered joint between the metal joining surface of the first passive device and the first metal region; and a second soldered joint between the metal joining surface of the semiconductor die and the second metal region, wherein a minimum thickness of the first soldered joint is greater than a maximum thickness of the second soldered joint.

Batch soldering of different elements in power module

An arrangement includes a chamber, a heating element arranged in the chamber, wherein the heating element, when a first connection partner with a pre-connection layer formed thereon is arranged in the chamber, is configured to heat the first connection partner and the pre-connection layer, thereby melting the pre-connection layer, and a cooling trap. During the process of heating the first connection partner with the pre-connection layer formed thereon, the cooling trap has a temperature that is lower than the temperature of all other components of or in the chamber such that liquid evaporating from the pre-connection layer is attracted by and condenses on the cooling trap.

Arrangement for forming a connection

A semiconductor device includes: a semiconductor die having a metal region; a substrate having a metal region; and a soldered joint between the metal region of the semiconductor die and the metal region of the substrate. One or more intermetallic phases are present throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the semiconductor die and the metal region of the substrate. The soldered joint has the same length-to-width aspect ratio as the semiconductor die.

Semiconductor device having a soldered joint with one or more intermetallic phases

A housing for a power semiconductor module arrangement includes sidewalls and a lid. The lid includes a first layer of a first material having a plurality of openings, and second layer of a second material that is different from the first material. The second layer completely covers a bottom surface of the first layer. The second layer includes a plurality of protrusions, each protrusion extending into a different one of the plurality of openings of the first layer such that each of the plurality of openings is completely covered by one of the protrusions.

Housing, semiconductor module and methods for producing the same

A method of manufacturing a module is disclosed. In one example, the method comprises providing at least one solder body with a base portion and an elevated edge extending along at least part of a circumference of the base portion. At least one carrier, on which at least one electronic component is mounted, is placed in the at least one solder body so that the at least one carrier is positioned on the base portion and is spatially confined by the elevated edge.

Manufacturing a module with solder body having elevated edge

A baseplate for a semiconductor module comprises at least one elevation. The at least one elevation is formed integrally with the baseplate. The baseplate has a uniform first thickness or a thickness which decreases continuously from the edge regions toward the center and which is increased locally up to a maximum second thickness in the region of each of the at least one elevation.

Baseplate for a semiconductor module and method for producing a baseplate

A batch soldering method includes providing a first passive device, arranging the first passive device on a first metal region of a substrate with a region of first solder material between the first passive device and the substrate, providing a semiconductor die, arranging the semiconductor die on a second metal region of the substrate with a region of second solder material between the semiconductor die and the substrate, and performing a common soldering step that simultaneously forms a first soldered joint from the region of first solder material and forms a second soldered joint from the region of second solder material. The common soldering step is performed at a soldering temperature such that one or more intermetallic phases form within the second soldered joint, each of the one or more intermetallic phases having a melting point above the second solder material and the soldering temperature.

A power semiconductor device includes a die carrier, a power semiconductor chip coupled to the die carrier by a first solder joint, a sleeve for a pin, the sleeve being coupled to the die carrier by a second solder joint, and a sealing mechanically attaching the sleeve to the die carrier, the sealing being arranged at a lower end of the sleeve, wherein the lower end faces the die carrier, and wherein the sealing does not cover the power semiconductor chip.

Power semiconductor device and method for fabricating a power semiconductor device

A method of joining a semiconductor die to a substrate includes: applying a solder preform to a metal region of the semiconductor die or to a metal region of the substrate, the solder preform having a maximum thickness of 30 &#x3bc;m and a lower melting point than both metal regions; forming a soldered joint between the metal region of the semiconductor die and the metal region of the substrate via a diffusion soldering process and without applying pressure directly to the die; and setting a soldering temperature of the diffusion soldering process so that the solder preform melts and fully reacts with the metal region of the semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the melting point of the preform and the soldering temperature.

Preform diffusion soldering

A method of batch soldering includes: forming a soldered joint between a metal region of a first semiconductor die and a metal region of a substrate using a solder preform via a soldering process which does not apply pressure directly to the first semiconductor die, the solder preform having a maximum thickness of 30 &#x3bc;m and a lower melting point than the metal regions; setting a soldering temperature of the soldering process so that the solder preform melts and fully reacts with the metal region of the first semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the preform melting point and the soldering temperature; and soldering a second semiconductor die to the same or different metal region of the substrate, without applying pressure directly to the second semiconductor die.

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Geseke, Germany

Arthur Unrau