US Government As Represented by the Secretary of the Army

Other

Arthur Tauber

Steven C Tidrow

William D Wilber

Robert D Finnegan

Herbert A Leupold

Donald W Eckart

William C Drach

Frederick Rothwarf

Robert L Bergner

Daniel M Potrepka

Ernest Potenziani, Ii

Robert A Lux

Joseph P Klimek

Michelle A Dornath Mohr

Frank A McBride

James A Harvey

Rare earth metal containing compounds of the formula SrYbSbOhave been prepared with high critical temperature thin film superconductor structures, and can be fabricated into a superconductor insulator superconductor step edge Josephson junction, as well as being used in other ferroelectrics, pyroelectrics, and hybrid device structures.

Rare earth metal compounds for use in high critical temperature Josephson junctions

Rare earth metal containing compounds of the formula SrLuSbOand SrLaSbOhave been prepared as high critical temperature thin film superconductor structures, and can be used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Rare earth metal compounds for use in high critical temperature thin film super-conductors

Rare earth metal containing compounds of the general formula SrRESbO, wherein RE is a rare earth metal, have been prepared as dielectric substrates and buffer layers in thin film superconductor structures, and can be used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Rare earth metal compounds for use in high critical temperature thin film structures for super-conductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrids

Rare earth metal containing compounds of the formula SrLuSbOhave been prepared with high critical temperature thin film superconductor structures, and can be fabricated into an antenna, as well as being used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Rare earth metal compounds for use in high critical temperature thin film super-conducting antennas

Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric perovskite-structured materials having reasonably low and fairly temperature insensitive dielectric constants (stable dielectric constants over a wide range of operating temperatures of &#x2212;80&#xb0; C. to 100&#xb0; C.), reasonable loss tangents (&#x3c;&#x2dc;10), high tunability, and significantly lowered Curie temperature below the temperature range of operation for previous undoped perovskite structures are provided. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure. This single-phase structure or a variant of it with a Ti rich composition, provided herein, allows for pulsed-laser-deposition of a thin film with uniform transfer of the structure of the target into the deposited film, which enables production of very small, lightweight devices that are extremely efficient and consume little power. These ferroelectric/paraelectric materials may be used in phase shifter devices (such as used in cell phones, antennas and the like), variable true time delay devices, steerable beams, tunable filters, impedance transformers, variable control oscillators, antennas, radios, filters, microwave variable capacitors, radar systems, electronic warfare sensors, resonators, microwave transverse-electromagnetic-ferroelectric voltage-controlled oscillators, and other RF, microwave, or millimeter wave tunable devices for synthesizers and systems incorporating all of the above, as well as any application that enhances the performance of various types of electrical and electro-optic devices.

Ferroelectric/paraelectric materials, and phase shifter devices, true time delay devices and the like containing same

Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric lead-based perovskite-structured materials having reasonably low and fairly temperature insensitive dielectric constants (stable dielectric constants over a wide range of operating temperatures of &#x2212;80&#xb0; C. to 100&#xb0; C.), reasonable loss tangents (&#x3c;&#x2dc;10), high tunability, and significantly lowered Curie temperature below the temperature range of operation for previous undoped perovskite structures are provided. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure. This single-phase structure or a variant of it with a Ti rich composition, provided herein, allows for pulsed-laser-deposition of a thin film with uniform transfer of the structure of the target into the deposited film, which enables production of very small, lightweight devices that are extremely efficient and consume little power. These ferroelectric/paraelectric materials may be used in phase shifter devices (such as used in cell phones, antennas and the like), variable true time delay devices, steerable beams, tunable filters, impedance transformers, variable control oscillators, antennas, radios, filters, microwave variable capacitors, radar systems, electronic warfare sensors, resonators, microwave transverse-electromagnetic-ferroelectric voltage-controlled oscillators, and other RF, microwave, or millimeter wave tunable devices for synthesizers and systems incorporating all of the above, as well as any application that enhances the performance of various types of electrical and electro-optic devices.

Rare earth metal containing compounds of the general formula Sr RESbO , wherein RE is a rare earth metal, have been prepared with high critical temperature thin film superconductor strucutures, and can be used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Rare earth metal compounds for use in high critical temperature thin film super-conductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrids

Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric materials comprising a charge compensated lead-based perovskite having the general formula ABO is provided, which has reasonably low and fairly temperature insensitive dielectric constants over operating temperatures of &minus;80&deg; C. to 100&deg; C., reasonable loss tangents (<&tilde;10 ), and high tunability. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure. These ferroelectric/paraelectric materials may be used in phase shifter devices (such as used in cell phones, antennas and the like), variable true time delay devices, steerable beams, tunable filters, impedance transformers, variable control oscillators, antennas, radios, filters, microwave variable capacitors, radar systems, electronic warfare sensors, resonators, microwave transverse-electromagnetic-ferroelectric voltage-controlled oscillators, and other RF, microwave, or millimeter wave tunable devices for synthesizers and systems incorporating all of the above, as well as any application that enhances the performance of various types of electrical and electro-optic devices.

Compounds of the general formula A,MeSb,O,wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

A4MeSb3O12 compounds for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures

Compounds of the of the general formula La,Me,Ba,Ca,Nc,Cu,O,, wherein Me can be a rare earth metal or an alkaline metal ion selected from the group consisting of yttrium (Y), ytterbium (Yb), sodium (Na) and Nc can be a 2&plus; ion selected from the group consisting of magnesium (Mg) and cadmium (Cd) have been prepared as the HTSC in thin film superconductors. These compounds can be used as thin film high critical superconductors in thin film high critical temperature superconducting structures and antennas and in multilayered structures and devices such as Josephson junctions, broadband impedance transformers and both flux flow and field effect transistors

High critical temperature superconductors in the system La3-ZMezBa3Ca1&minus;vNcvCu7O16&plus;x where Me&equals;a rare earth or alkaline metal ion and Nc is a Mg, Cd ion

The microwave properties of numerous perovskite antimonates like A,MeSbO,where A&equals;Ba or Sr, Me&equals;a rare earth, Y, Sc, Ga, or In and A,MeSb,O,where A&equals;Ba or Sr and M&equals;Li, Na or K were measured at 10 Ghz and 300 K. Using the microwave properties and lattice parameters of these materials, the Clausius-Mossotti relationship and a nonlinear regression fitting program, the polarizability of Sb,was investigated and determined to be 1.18&plusmn;0.49 A,. This low polarizability and the low loss of antimonates in general indicate that Sb,is an excellent candidate for use as a constituent in the fabrication of low dielectric constant, low loss, lattice matching perovskite oxide microwave substrates.

Low polarizability of Sb5&plus; for use in fabrication of low dielectric constant materials

Compounds of the general formula Ca.sub.2 MeSbO.sub.6 where Me is a 3+ ion selected from the group consisting of aluminum (Al), scandium (Sc), indium (In), gallium (Ga), or a rare earth metal have been prepared and included as the substrate or barrier dielectric in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

YBCO epitaxial films deposited on substrate and buffer layer compounds

Compounds of the general formula A.sub.4 MeSb.sub.3 O.sub.12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

A.sub.4 MeSb.sub.3 O.sub.12 substrates and dielectric/buffer layers for

In the preferred embodiment, a variable magnetic reluctor structure comprng an iron yoke having two opposing 'U'-shaped bodies, magnetic flux sources formed by portions of the yoke, a magnetic flux path, a working space and a reluctor space is provided. A reluctor member comprising diamagnetic disks is inserted within the reluctor space decreasing the magnetic permeability of the magnetic flux path to a value lesser than that of air (1.0). The iron disks increase permeability, while either a Type I or a Type II superconducting disk or a combination of iron disks interspersed between Type II superconducting disks decreases permeability. Reluctor members comprising disks constructed solely of either iron, a Type I superconducting material, a Type II superconducting material, or a diamagnetic material, can be mounted in a rotating arrangement so that a different reluctor member can be mechanically inserted within the reluctor space resulting in increases or decreases to the magnetic permeability of the magnetic flux path to a value greater than that of air (1.0). In other embodiments of this invention, a permanent magnetic reluctor structure comprising a horseshoe-shaped magnetic flux source and two reluctor members comprised of stacked superconducting baffles, as well as structures utilizing thermal controls on permeability of reluctor members of a variable magnetic reluctor structure are provided. Methods of varying permeance are also shown.

Thermally controlled magnetic reluctor structures and methods

Compounds of the of the general formula La.sub.3-z Me.sub.z Ba.sub.3 Ca.sub.1-v Nc.sub.v Cu.sub.7 O.sub.16+x, wherein Me can be a rare earth metal or an alkaline metal ion selected from the group consisting of yttrium (Y), ytterbium (Yb), sodium (Na) and Nc can be a 2+ion selected from the group consisting of magnesium (Mg) and cadmium (Cd) have been prepared as the HTSC in thin film superconductors. These compounds can be used as thin film high critical superconductors in thin film high critical temperature superconducting structures and antennas and in multilayered structures and devices such as Josephson junctions, broadband impedance transformers and both flux flow and field effect transistors

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Elberon, NJ, United States of America

Arthur Tauber