Motorola Corporation

Freescale Semiconductor,inc.

Arm Limited

Arthur R Piejko

Ravindraraj Ramaraju

Gerard Richard Williams

David R Bearden

Michael C Alexander

Mark Allen Silla

Carmine Nicoletta

Michael L Brauer

A storage element () includes a first latch () and a second latch (). The first latch () is coupled to a first power supply voltage terminal for receiving a first power supply voltage. The second latch () is coupled to a second power supply voltage terminal. The second power supply voltage terminal for receiving a second power supply voltage that is lower than the first power supply voltage. During a normal mode of operation, the second power supply voltage is not provided to the second latch. During a low power mode of operation data is transferred from the first latch to the second latch and the first latch is powered down. The data is retained by the second latch while in low power mode.

Integrated circuit storage element having low power data retention and method therefor

The present invention relates to a memory device and method for reducing leakage current during a power down mode of operation. The memory device comprises a column of memory cells, with each memory cell being arranged to store a data value, and a pair of bit lines coupled to the column of memory cells. Bit line precharge circuitry is provided for precharging the pair of bit lines to a predetermined voltage level during a precharge phase, the pair of bit lines being arranged such that, when a particular memory cell in the column is selected in an evaluate phase following the precharge phase, a relative change in voltage level between the pair of bit lines indicates the data value stored within the selected memory cell. In accordance with the present invention, the memory device further comprises power down control circuitry arranged when the memory device is to enter a power down mode to prevent the bit line precharge circuitry from precharging the pair of bit lines, and selector circuitry arranged when the memory device is to enter the power down mode to ensure that none of the memory cells in the column are selected. It has been found that by taking this approach during the power down mode of operation, a significant reduction in the leakage current is observed.

Reducing leakage current in a memory device

A method and apparatus for synchronizing multiple busses having different cycle times in a data processing system (10). The present invention synchronizes multiple clocks having different phase and frequencies without redundant use of phase lock loop units. An initial unit (7) receives an external system clock having an initial phase and frequency. An internal clock (112) is generated which is a phase and frequency adjusted derivation of the system clock. From this internal clock (112) a global clock (101) for use within the data processor (10) is generated. A second unit (9) receives the internal clock (112) and performs phase adjustment to provide a peripheral clock (114). The provision of the internal clock (112) detaches the dependency of peripheral clock (114) generation from the global clock (101), while maintaining a phase relationship with the global clock (101). In one embodiment, the present invention is implemented without the costly use of multiple phase lock loops.

Method and apparatus for synchronizing multiple clocks

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Austin, TX, United States of America

Arthur R Piejko