Lasa Industries, Inc.

Arthur R Elsea, Jr

Daniel J Dooley

An improved method of patterning layers on a semiconductor element by use of laser processing. A thin film of amorphous silicon is deposited on a fused quartz window. Selected regions of the amorphous silicon are crystallized by a laser beam focused through the quartz window. The non-crystallized silicon is removed forming an opaque layer of crystallized silicon in the desired pattern. The quartz window is used as a window to a reactive gas containment chamber containing semiconductor devices to be patterned. By irradiating the chamber with ultraviolet light through the patterned quartz window, the semiconductor element is etched in the regions exposed to the light.

Method of making laser generated I. C. pattern for masking

An improved method of making masks includes forming a layer of amorphous silicon of about 2,000 angstroms on a transparent substrate. A laser beam is directed through the transparent substrate traverses the amorphous silicon to form a pattern of crystallized silicon. The n-crystallized silicon is etched leaving a patterned substrate. The patterned substrate is used as a mask for exposing photoresist on semiconductor elements.

Method for fabricating laser generated I.C. masks

An improved method of patterning a conductive interconnect on a semiconductor element is disclosed. A catalytic layer of, for example, amorphous silicon is deposited on a semiconductor element. The areas over which a conductive pattern is to be formed is activated by directing a focused laser beam onto the amorphous silicon to form crystallized silicon. The amorphous silicon is then etched away after which a conductive material such as a metal is deposited on the activated crystallized silicon.

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Freemont, CA, United States of America

Arthur R Elsea, Jr