Alcatel Lucent

Columbia University

Alcatel-lucent USA Inc.

Arthur Penn Ramirez

Aref Chowdhury

Theo Max Siegrist

Woo-Young So

Christian Leo Kloc

A method of processing an electromagnetic signal, comprising includes configuring a waveguide that includes a multiferroic medium to propagate the electromagnetic signal. A mechanical strain or a control electrical or magnetic field is applied to the waveguide such that the applying changes a permittivity or a permeability of the medium. The electromagnetic signal is propagated through said waveguide while performing the applying.

Method employing multiferroic materials for tunable permittivity or permeability

An apparatus has a waveguide that includes a multiferroic medium. A controller is configured to apply a mechanical strain or a control electric or magnetic field to the multiferroic medium. The multiferroic medium has a dielectric permittivity or magnetic permeability that is responsive to the strain or the control field.

Apparatus employing multiferroic materials for tunable permittivity or permeability

A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

Method of doping organic semiconductors

An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.

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Arthur Penn Ramirez