Ut-battelle, Inc.

Arthur P Baddorf

Sergei V Kalinin

Ho Nyung Lee

Raphael C Pooser

Hans M Christen

Benjamin J Lawrie

Alexei L Gruverman

Junsoo Shin

Abhinav Malasi

Vincent Meunier

Ramakrishnan Kalyanaraman

Mark Kachanov

Maulik K Patel

Humaira Taz

Gerd Josef Mansfred Duscher

Annettee E Farah

Edgar Karapetian

An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

Semiconductor composition containing iron, dysprosium, and terbium

A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

Ferroelectric tunneling element and memory applications which utilize the tunneling element

A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

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Knoxville, TN, United States of America

Arthur P Baddorf