Air Products and Chemicals, Inc.

Other

Versum Materials Us, LLC

Arthur Kenneth Hochberg

David A Roberts

Manchao Xiao

Yoshihide Senzaki

Robert Daniel Clark

John Anthony Thomas Norman

Ravi Kumar Laxman

Kirk Scott Cuthill

David L O'Meara

Andre Lagendijk

Raymond Nicholas Vrtis

Diwakar Garg

Charles Michael Birtcher

Thomas Andrew Steidl

John A Norman

Glenn B Alers

John Giles Langan

Hareesh Thridandam

Stephen M Fine

Robert McLemore Fleming

Richard J Dunning

Robert G Bryant

John D Loftin

Herman Gene Hockenhull

Felicia Diane Kaminsky

David Lillis O'meara

Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SiCN. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas:  and mixtures thereof, wherein R and Rin the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and Rin formula A also being combinable into a cyclic group, and Rrepresenting a single bond, (CH), a ring, or SiH.

Precursors for CVD silicon carbo-nitride films

Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SiCN. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: 

Methods for depositing silicon carbo-nitride film

Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: 

Precursors for CVD silicon carbo-nitride and silicon nitride films

A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.

Diethylsilane as a silicon source in the deposition of metal silicate films

A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula:[RN&#x2014;NH]Si(R)where each Ris independently selected from alkyl groups of Cto C; each Ris independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.

Precursors for depositing silicon containing films

Vessel and method for the production and delivery of a precursor-containing fluid stream comprising the gaseous phase of a precursor material are disclosed herein. In one aspect, there is provided an vessel comprising: an interior volume wherein the interior volume is segmented into an upper volume and a lower volume wherein the upper volume and the lower volume are in fluid communication; a lid comprising a fluid inlet, a fluid outlet, an optional fill port, and an internal recess wherein at least a portion of the upper volume resides within the internal recess; a sidewall interposed between the lid and a base; and at least one protrusion that extends into the lower volume wherein the precursor is in contact with the at least one protrusion and wherein at least one protrusion extends from at least one selected from the lid, the sidewall, the base, and combinations thereof.

Method and vessel for the delivery of precursor materials

Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula:[RN&#x2014;NH]Si(R)where each Ris independently selected from alkyl groups of Cto C; each Ris independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1&#x2013;4. Some of the hydrazinosilanes are novel precursors.

Precursors for depositing silicon containing films and processes thereof

This invention pertains to complex mixtures of the formula M is a metal having a valence of from 2&#x2013;6, L1 is an anionic ligand and L2 is a siloxide or silyl amide ligand suited for producing stable thin-film metal silicates, v is equal to the valence of the metal, and 0&#x3c;x&#x3c;v. The bonding is such that an M&#x2014;O&#x2014;Si or an M&#x2014;N&#x2014;Si linkage exists, respectively, and the stability for the complex is provided by the organic ligand. The invention also relates to a process for preparing the metal siloxide complexes. Thus, the complexes can be represented by the formulas(R)M&#x2014;(O&#x2014;SiRRR)and(R)M&#x2014;[N&#x2014;(SiRRR)(R)]wherein M is a metal having a valence of 2&#x2013;6, m and n are positive integers and m plus n is equal to the valence of the metal M. The R type groups, i.e., R, R, R, R, and Rrepresent an organo ligand.

Single source mixtures of metal siloxides

This invention relates to a chemical vapor deposition process for forming Zr or Hf oxynitride films suitable for use in electronic applications such as gate dielectrics. The process comprises: a. delivering a Zr or Hf containing precursor in gaseous form to a chemical vapor deposition chamber, and, b. simultaneously delivering an oxygen source and a nitrogen source to the chamber separately, such that mixing of these sources with the precursor does not take place prior to delivery to the chamber, and, c. contacting the resultant reaction mixture with a substrate in said chamber, said substrate heated to an elevated temperature to effect deposition of the Zr or Hf oxynitride film, respectively. A silicon containing precursor may be added simultaneously to the chamber for forming Zr or Hf silicon oxynitride films.

Process of CVD of Hf and Zr containing oxynitride films

A method for producing a material selected from the group consisting of metal oxide, metal oxynitride and mixtures thereof on a substrate, comprising; reacting a first reactant selected from the group consisting of (R R N) M(&boxH;NR ) , (R R N) M&lsqb;&eegr; &mdash;R N&boxH;C (R )(R )&rsqb; and mixtures thereof with an oxidant and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N O, NO, NO , alkyl amines, N H , alkyl hydrazine, N and mixtures thereof, to produce said material on said substrate, where R , R , R , R , R , R , R and R are individually C alkyl, aryl or hydrogen, M&boxH;Ta, Nb, W or Mo or mixtures thereof, and when M&boxH;Ta or Nb, x&equals;3 and y&equals;1 and when M&boxH;W or Mo, y&equals;x&equals;2.

Synthesis of metal oxide and oxynitride

A process for deposition of a multiple metal and metalloid compound layer with a compositional gradient of the metal and metalloid in the layer on a substrate of an electronic material, comprising: a) providing two or more metal-ligand and metalloid-ligand complex precursors, wherein the ligands are preferably the same; b) delivering the precursors to a deposition zone where the substrate is located; c) contacting the substrate under deposition conditions with the precursors; d) varying the temperature of deposition from a first temperature to a second distinct temperature which is at least 40&deg; C. from said first temperature during the contact, and e) depositing a multiple metal and metalloid compound layer on the substrate from the precursors resulting in the compositional gradient of the metal and metalloid in the layer as a result of step d). An oxygen source can be added to result in a metal-metalloid oxide, or a nitrogen source can be added to result in a metal-metalloid nitride, or a mixture of an oxygen and a nitrogen source can be added to result in a metal-metalloid oxynitride. The metalloid would preferably be silicon.

Process for metal metalloid oxides and nitrides with compositional gradients

The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.

Liquid precursor mixtures for deposition of multicomponent metal containing materials

Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.

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Solana Beach, CA, United States of America

Arthur Kenneth Hochberg