Corning Glass Works

Corning Incorporated

Arthur J Whitman

Peter L Young

Nicholas Francis Borrelli

Francis P Fehlner

Roger A Miller

Donald M Trotter

Francis P Fehiner

An improved method for crystallizing amorphous or polycrystalline material is disclosed, which method employs a novel intermediate product. A film of material to be crystallized is formed on a substrate. A porous silica cap is formed over the film. The resultant intermediate product is heated to melt the film which crystallizes upon cooling. Gases generated during melting of the film escape through the porous cap which also functions to prevent deleterious agglomeration of the material while it is in a molten state.

Capping layer for recrystallization process

This invention relates to a method for preparing a lens or a lens array and apparatus for carrying out the method. The method comprises directing, in line of sight in a vacuum, the vapor of a substance, which is solid and transparent at ambient temperature, from a source of that vapor through a hole in a mask to form a deposit on a substrate. The mask is so positioned between the vapor source and the substrate that obscuration by the solid portions of the mask around the hole causes the deposit to assume a curved surface and function as a lens.

Lenses and lens arrays

An optical information storage medium comprising a thin, optically darkenable film containing silver, lead, chlorine and oxygen, produced by vapor-depositing AgCl and PbO in specified proportions on a substrate for the film, is described.

Archival optical recording medium

A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having formed thereon a duplex electrically conductive film comprising a non-tantalum electrically conductive film electrode covered by a thin tantalum film is disposed within an oxygen-inert gas containing vacuum environment, said non-tantalum film being disposed intermediate said substrate and said tantalum film. A film of tantalum oxide is applied over the conductive film by r-f sputtering of a tantalum oxide target within the oxygen-inert gas containing vacuum environment while the dielectric substrate and conductive film are being cooled. The composite may then be removed from said oxygen-inert gas containing environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.

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Horseheads, NY, United States of America

Arthur J Whitman