Intermolecular, Inc.

Elpida Memory, Inc.

Arthur Gevondyan

Sandra Guy Malhotra

Hanhong Chen

Hiroyuki Ode

Wim Deweerd

Provided are MIM DRAM capacitors and methods of forming thereof. A MIM DRAM capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 eV). This layer may be used to reduce the leakage current through the capacitor. The capacitor may also include another electrode layer having a high conductivity base portion and a conductive metal oxide portion. The conductive metal oxide portion serves to promote the growth of the high k phase of the dielectric layer.

Growing community of inventors

San Francisco, CA, United States of America

Arthur Gevondyan