At&t Bell Laboratories

Lucent Technologies Inc.

Bell Telephone Laboratories

At+t Corp.

Arthur F Hebard

Robert Cort Haddon

Donald Winslow Murphy

Matthew Jonathan Rosseinsky

Greg E Blonder

Barry Irwin Miller

William Larry Wilson

Theodore A Fulton

Joseph M Rosamilia

Thomas T Palstra

Joanna M Vandenberg

Carbonaceous materials based on the fullerene molecules have been developed which allow for superconductivity. The fullerene materials are soluble in common solvents.

Superconductivity in carbonaceous compounds and devices using such

An n-channel field-effect transistor is fabricated utilizing a thin-film fullerene (for example, C.sub.60) as the active element. The fullerene film is deposited onto a device substrate in an ultra-high-vacuum chamber and is thus substantially oxygen-free. Subsequently, while still in the chamber, the fullerene film is encapsulated with a material that is impervious to oxygen.

N-channel field effect transistor including a thin-film fullerene

Carbonaceous materials based on the fullerene molecules have been developed which allow for high conductivity (comparable to or higher than those attained by n-type doped polyacetylene). The fullerene materials are soluble in common solvents.

Conductivity in carbonaceous compounds and devices using such compounds

It has been found that fullerenes exhibit photoelectronic behavior such as photoconductivity or photovoltaic properties. Such behavior allows the fabrication of a variety of devices, such as solar cells and the use of various light-induced processes, such as the generation of a current by illumination of appropriate fullerene interfaces.

Devices involving the photo behavior of fullerenes

A method for fabricating thin smooth films of a planar metal oxide superconductor is disclosed. Fabrication of the superconductor film comprises depositing, on a substrate, a film of the planar metal oxide superconductor having a thickness greater than desired, and thinning at least a portion of the superconductor film to the desired thickness. In a particular embodiment of the method, thinning comprises exposing the superconductor film to a low energy ion beam directed at grazing incidence to the superconductor surface. Thin superconductor films fabricated in accordance with this method typically have substantially smooth surfaces and can have relatively low RF loss. These films can be advantageously used, inter alia, in RF striplines, microwave cavities and waveguides, bolometers, SQUIDs, and other Josephson junction devices.

Method of producing a device comprising a metal oxide superconductor

An optical disc including a medium having both a continuous phase and a non-continuous phase yields excellent contrast and stability for optical recording purposes. Exemplary of materials that form the desired multi-phase system are those produced by sputtering metals such as indium in an oxygen environment.

Optical information storage

Described is a DC powered flip-flop logic or memory element (i.e., circuit) which comprises two Josephson junction gates J.sub.1 and J.sub.2 which operate individually in the latching mode. In one logic state, the gate J.sub.1 is at V.sub.1 =O while J.sub.2 is at V.sub.2 .noteq.O. In the other logic state, the roles of the two junctions are reversed. The two junctions are interconnected by a passive network such that the switching of J.sub.2, say, from V.sub.2 =O to V.sub.2 .noteq.O induces a current-voltage transient on J.sub.1 which returns it to V.sub.1 =O, and conversely.

Hybrid unlatching flip-flop logic element

This invention relates to granular metal and metal oxide superconducting films formed by ion beam sputter deposition. Illustratively, the films comprise irregularly shaped, randomly oriented, small lead grains interspersed in an insulating lead oxide matrix. The films are hillock-resistant when subjected to thermal cycling and exhibit unusual Josephson-type switching characteristics. Depending on the oxygen content, a film may behave in a manner similar to that of a plurality of series connected Josephson junctions, or the film may have a voltage difference in a direction parallel to a major surface of the film that is capable of being switched from zero voltage difference to a finite voltage difference in response to a current larger than the critical current.

Growing community of inventors

Bernardsville, NJ, United States of America

Arthur F Hebard