Rf Micro Devices, Inc.

Akoustis, Inc.

Arthur E Geiss

Larry W Kapitan

Matthew L Seaford

Thomas J Rogers

Wayne Lewis

Craig Moe

Jeffrey M Leathersich

A method of forming a piezoelectric film can include providing a wafer in a CVD reaction chamber and forming an aluminum nitride material on the wafer, the aluminum nitride material doped with a first element E1 selected from group IIA or from group IIB and doped with a second element E2 selected from group IVB to provide the aluminum nitride material comprising a crystallinity of less than about 1.5 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).

Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films

The present invention provides a highly doped semiconductor layer. More specifically, the present invention provides a semiconductor layer that includes at least two impurities. Each impurity is introduced at a level below its respective degradation concentration. In this manner, the two or more impurities provide an additive conductivity to the semiconductor layer at a level above the conductivity possible with any one of the impurities alone, due to the detrimental effects that would be created by increasing the concentration of any one impurity beyond its degradation concentration.

Semiconductor layer

Highly conductive semiconductor layer having two or more impurities

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Greensboro, NC, United States of America

Arthur E Geiss