United Microelectronics Corp.

Art Yu

Teng-Chun Tsai

Hsueh-Chung Chen

Chia-Lin Hsu

Shih-Hsun Hsu

Hsiao-Ling Lu

Chia-Jung Hsu

Zong Huei Lin

Chia Rung Hsu

Chia-Rung Hsu

A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.

Chemical mechanical polishing process for forming shallow trench isolation structure

A polish method for planarization is disclosed. The method uses a combination of a traditional oxide CMP and HSP-CMP (High Selectivity and Planarization) with a fix abrasive pad to meet the requirements of the CMP process for a device feature dimension under 0.18 micron even to 0.09 micron. By using a first polish step with a conventional polish pad and an oxide polish slurry, the non-uniformity of the over-fill thickness of the STI dielectric layer can be firstly removed and a much more smooth and uniform topography favorable for the HSP-CMP process the fix abrasive polishing pad can be obtained. Then the HSP-CMP process with the fix abrasive polishing pad can be performed to provide a planarized surface with accurate dimension control.

Polish method for semiconductor device planarization

A wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same are provided. The present wafer carrier assembly comprises a first plate, a second plate and a flexible membrane. The first plate has a plurality of protrusions formed on a bottom surface thereof and the second plate has a plurality of apertures passing through. Each of the protrusions is matched with one of the apertures to enable the first plate and the second plate to detachably combine together. The flexible membrane is positioned under the second plate and contacts it. A surface of the flexible membrane opposite to the surface of the flexible membrane contacting the second plate provides a wafer-receiving surface.

Wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same

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Fongshan, Taiwan

Art Yu