Lawrence Livermore National Security, LLC

General Atomics, Inc.

Art J Nelson

Stephen Anthony Payne

Adam M Conway

Rebecca J Nikolic

Lars F Voss

Michael Stadermann

Robert T Graff

William C Floyd, Iii

Philip Edward Miller

Tayyab Ishaq Suratwala

Salmaan H Baxamusa

Chantel M Aracne-Ruddle

Erik Lars Swanberg, Jr

Anatolios A Tambazidis

Kelly Patricia Youngblood

Maverick Chea

Shuali Li

Hadong Kim

Patrick R Beck

A method of making large ultrathin free-standing polymer films without use of a sacrificial layer includes the steps of providing a substrate, applying a polyelectrolyte material to said substrate, applying a polymer material onto said substrate and onto said polyelectrolyte material, and directly delaminating said polymer material from said substrate and said polyelectrolyte to produce the ultrathin free-standing polymer film.

Preparation of large ultrathin free-standing polymer films

Preparation of large ultra-thin free-standing polymer films

In various approaches room-temperature gamma detector longevity may be improved by selectively removing, or selectively incorporating, alternate halogen component(s) from select surfaces of the detector. According to one embodiment, a method of improving operational longevity of a thallium bromide (TlBr)-based detector includes: selectively treating one or more surfaces of the TlBr-based detector to produce a surface substantially comprising pure TlBr. Similar techniques may be employed to restore a degraded or failed detector. According to another embodiment, a method of forming a TlBr-based detector exhibiting improved operational longevity includes: selectively treating one or more surfaces of the TlBr-based detector to replace Br therein with one or more alternate halogen components while also substantially avoiding replacing some or all of the Br in other surfaces of the TlBr-based detector with the one or more alternate halogen components. Corresponding structures for TlBr-based detectors with improved longevity are also described.

Selective surface treatment of thallium bromide (TLBR)-based detectors to improve longevity and/or restore operational capacity thereof

A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of &#x2dc;0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

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Livermore, CA, United States of America

Art J Nelson