Array Photonics, Inc.

Arsen Sukiasyan

Ting Liu

Ferran Suarez

Jordan Lang

Homan Bernard Yuen

Sabeur Siala

Aymeric Maros

Radek Roucka

David Taner Bilir

Ivan Hernandez

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells

Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.

High efficiency multijunction photovoltaic cells

Growing community of inventors

Plainsboro, NJ, United States of America

Arsen Sukiasyan