University of California

Cree Gmbh

Soraa, Inc.

Japan Science and Technology Agency

Apple Inc.

Korrus, Inc.

Agency of Industrial Science and Technology

Creeled, Inc.

Ecosense Lighting, Inc.

Sorra, Inc.

Arpan Chakraborty

Steven P DenBaars

Umesh Kumar Mishra

James Stephen Speck

Shuji Nakamura

Michael Ragan Krames

Benjamin A Haskell

Troy A Trottier

Likun Shen

David P Bour

Kelly C McGroddy

Jean-Jacques P Drolet

James Michael Perkins

Anurag Tyagi

Daniel Arthur Haeger

Rajat Sharma

Dmitry S Sizov

Troy J Baker

Robert M Farrell

P Morgan Pattison

Bernd P Keller

Aurelien J F David

Frank Michael Steranka

Stacia Keller

William Houck

Mark Philip D'Evelyn

George R Brandes

Monica Hansen

Erin C Young

William D Houck, Ii

Hiroaki Ohta

Kwang-Choong Kim

Feng Wu

Eric J Tarsa

James Ibbetson

Ashay Chitnis

Yankun Fu

Michael J Grundmann

James Seruto

Gerald H Negley

Antony Paul Van De Ven

John Adam Edmond

John K Roberts

David T Emerson

Michael John Bergmann

Mathew C Schmidt

Ronan P Le Toquin

Rafael Ignacio Aldaz

Jeffrey Carl Britt

Jasper S Cabalu

Nicholas W Medendorp

Evelyn Lynn Hu

Ronan P LeToquin

Adele Clare Tamboli

Tal Margalith

Kelly Mcgroddy

An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

System and method for providing color light sources in proximity to predetermined wavelength conversion structures

An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

System and method for selected pump LEDs with multiple phosphors

A radiation emitting device comprising light scattering particles of different sizes that at least partially surround an emitter, improving the spatial color mixing and color uniformity of the device. Multiple sizes of light scattering particles are dispersed in a medium to at least partially surround a single- or multiple-chip polychromatic emitter package. The different sizes of light scattering particles interact with corresponding wavelength ranges of emitted radiation. Thus, radiation emitted over multiple wavelength ranges or sub-ranges can be efficiently scattered to eliminate (or intentionally create) spatially non-uniform color patterns in the output beam.

Light emitting device packages using light scattering particles of different size

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

LED structures for reduced non-radiative sidewall recombination

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

Method and system for epitaxy processes on miscut bulk substrates

Disclosed is a method for processing GaN based substrate material for manufacturing light-emitting diodes, lasers, and other types of devices. In various embodiments, a GaN substrate is exposed to nitrogen and hydrogen at a high temperature. This process causes the surface of the GaN substrate to anneal and become smooth. Then other processes, such as growing epitaxial layers over the surface of GaN substrate, can be performed over the smooth surface of the GaN substrate.

Method for smoothing surface of a substrate containing gallium and nitrogen

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Goleta, CA, United States of America

Arpan Chakraborty