Koninklijke Philips Corporation N.V.

Nxp B.v.

Stmicroelectronics S.a.

Arnoud Willem Fortuin

Michel Marty

Marcel Broekaart

Vincent Arnal

A metal interconnects structure, comprises a substrate (), a dielectric layer () lying above the substrate, a stop layer () for metal etching lying above the dielectric layer, a metal layer (') lying above the stop layer, said metal layer being patterned according to a desired pattern.

Metal etching method for an interconnect structure and metal interconnect structure obtained by such method

Deep isolation trenches having sides and a bottom are formed in a semiconductor substrate. The sides and the bottom are coated with an electrically insulating material that delimits an empty cavity, and forms a plug to close the cavity. The sides of the trench are configured with a neck that determines the depth of the plug, and a first portion that tapers outwards from the neck as the distance from the bottom increases. Deep isolation trenches may be applied, in particular, to bipole and BiCMOS circuits.

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Crolles, France

Arnoud Willem Fortuin