Asml Netherlands B.v.

Carl Zeiss Smt Gmbh

Arnoldus Jan Storm

Dirk Heinrich Ehm

Johannes Hubertus Josephina Moors

Michel Riepen

Bastiaan Theodoor Wolschrijn

Norbertus Benedictus Koster

Luigi Scaccabarozzi

Jacques Cor Johan Van Der Donck

Jeroen Huijbregtse

Thomas Stein

Edwin Te Sligte

Alexey Sergeevich Kuznetsov

Almut Czap

Irene Ament

Michiel Nienoord

Dries Smeets

Hermanus Hendricus Petrus Theodorus Bekman

Annemieke Van De Runstraat

Tina Graber

Mona Nagel

Jetske Karina Stortelder

Marijn Sandtke

Maria Isabel Catalina Caballero

Marco G H Meijerink

A G Ton M Bastein

Esther L J Van Soest-Vercammen

Frits G H M Gubbels

Peter J Oprel

An optical element (), comprising: a substrate (), an EUV radiation reflecting multilayer system () applied to the substrate, and a protective layer system () applied to the multilayer system and having at least a first and a second layer (). The first layer () is arranged closer to the multilayer system () than is the second layer () and serves as a diffusion barrier for hydrogen. This first layer () has a lower solubility for hydrogen than does the second layer (), which serves for absorbing hydrogen. Also disclosed are an optical system for EUV lithography with at least one such optical element, and a method for treating an optical element in order to remove hydrogen incorporated in at least one layer () of the protective layer system and/or in at least one layer () of the multilayer system ().

Optical element and optical system for EUV lithography, and method for treating such an optical element

An optical assembly is mounted in a projection exposure apparatus () for EUV microlithography and includes at least one vacuum chamber (), at least one optical element () arranged in the vacuum chamber (), the optical element () having an optical surface () arranged to be impinged upon by a useful beam bundle () of the projection exposure apparatus (), and a cleaning device () configured to clean the optical surface (). The cleaning device () is configured to perform particle cleaning of the optical surface () at a gas pressure within the vacuum chamber () which is higher than a vacuum pressure (p) for performing an exposure operation with the projection exposure apparatus (). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

Particle cleaning of optical elements for microlithography

An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30&#xb0; C. or more, preferably of approximately 100&#xb0; C. or more, particularly preferably of approximately 150&#xb0; C. or more, and even more preferably of approximately 250&#xb0; C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element

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Delft, Netherlands

Arnoldus Jan Storm