Advanced Micro Devices Corporation

Xilinx, Inc.

Arnold Y Louie

Jason Mulig

Michael R Bruce

Rosalinda M Ring

Victoria Jean Bruce

David Harry Eppes

Randy J Simmons

Maria G Guardado

Susan Xia Li

Paiboon Tangyunyong

Charles F Hawkins

Lee Ni Chung

Richard Jacob Wilcox

Felino E Pagaduan

Tony Le

Vickie Wu

Dahshi Shen

Edward I Cole, Jr

Embodiments herein describe techniques for binning integrated circuits (ICs) using an adaptive binning system that can re-bin the ICs in response to receiving a new or updated test specification. Unlike static binning systems, in one embodiment, the binning system receives measured test data from a testing system. Put differently, instead of a testing apparatus simply indicating whether an IC does (or does not) satisfy the criteria in the test specification, the testing apparatus provides measured test data to the binning system. The binning apparatus can then store the received test data. As such, if a new test specification is received or generated, the binning system can use the already saved test data to re-bin the ICs using the criteria in the new test specification without having to re-test the ICs. In this manner, the binning system can re-categorize the ICs as customer needs or customer demand changes.

Flexible manufacturing flow enabled by adaptive binning system

Method and system for testing an integrated circuit and more particularly, for determining timing associated with an input or output of an embedded circuit, in an integrated circuit for testing are described. A bit is adjustably delayed with a first adjustable delay to provide a delayed bit. The delayed bit is provided to a bus, such as an input bus for example, of the embedded circuit as a second vector. A third vector is output from the embedded circuit responsive to the second vector. A fourth vector is obtained having second multiple bits. The fourth vector is compared with the third vector to determine a period of delay associated with at least approximately a maximum operating frequency of the embedded circuit.

Determining timing associated with an input or output of an embedded circuit in an integrated circuit for testing

A test circuit for exposing higher order speed paths. A test circuit includes a clock generation circuit coupled to a test clock control unit. The clock generation circuit is configured to receive an input clock signal and to generate an output clock signal. The test clock control unit is configured to selectively provide a user programmable test vector or a fixed test vector to control the generation of the output clock signal by the clock generation circuit depending upon a state of a first mode select signal.

Test circuit for exposing higher order speed paths

A method and apparatus mechanism for testing data processing devices are implemented. The test mechanism isolates critical paths by correlating a scanning microscope image with a selected speed path failure. A trigger signal having a preselected value is generated at the start of each pattern vector. The sweep of the scanning microscope is controlled by a computer, which also receives and processes the image signals returned from the microscope. The value of the trigger signal is correlated with a set of pattern lines being driven on the DUT. The trigger is either asserted or negated depending the detection of a pattern line failure and the particular line that failed. In response to the detection of the particular speed path failure being characterized, and the trigger signal, the control computer overlays a mask on the image of the device under test (DUT). The overlaid image provides a visual correlation of the failure with the structural elements of the DUT at the level of resolution of the microscope itself.

Data processing device test apparatus and method therefor

The present invention provides a method for modifying a C4 device, the device including a circuit, a polyimide layer, and a plurality of solder bumps in the active region of the C4 device. The method includes removing the polyimide layer using a plasma etch, the plasma etch comprising a mixture of oxygen and an inert gas; modifying the circuit; and cleaning the modified C4 device with a reactive flux. By mixing the oxygen with an inert gas, the oxidation of the solder bumps due to the plasma etch are reduced. Because the top layer features are now readily visible, circuit structures are more easily located, and modification can be more easily performed and with more accuracy. In the preferred embodiment, the device is then cleaned with a reactive flux, which removes any oxidation layer which has formed on the solder bumps. In this manner, circuit modification may be performed more quickly while also minimizing the oxidation of the solder bumps. The reduced oxidation of the solder bumps will help the C4 packaging process to be successful for electrical testing after focused beam ion (FIB) modification. Also, since the costly FIB process is not required to locally remove the polyimide layer for locating circuit structures, the cost of device fabrication is reduced.

Method for modifying a C4 semiconductor device

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Santa Clara, CA, United States of America

Arnold Y Louie