Asml Netherlands B.v.

Arnold Sinke

Jan Hauschild

Johan Maria Van Boxmeer

Marnix Aldert Tas

Johannes Cornelis Maria Timmermans

Nicolass Antonius Allegondus Johannes Van Asten

Jascha Van Pommeren

A scatterometer for measuring a property of a substrate includes a focus sensing arrangement including an arrangement () that directs a first beam of radiation onto a focusing arrangement, to be detected by a focus sensor arrangement (). A focus controller () provides control signals representative of the relative positions of the focusing arrangement () and the substrate (W), which are required to focus the first beam of radiation on the substrate. An actuator arrangement adjusts the position of the focusing arrangement dependent on the control signals. An irradiation arrangement directs a second beam of radiation onto the substrate using the focusing arrangement, a measurement detector () detecting the second radiation beam after reflection from the substrate. A focus offset arrangement adjusts the focus produced by the focusing arrangement to compensate for an offset between the focusing of the first beam of radiation and the second beam of radiation.

Scatterometer and lithographic apparatus

A radiation source for use in lithography. The radiation source comprising a pn-junction disposed on a substrate that can be reverse-biased to cause avalanche breakdown and emission of UV or DUV radiation by deceleration of electrons accelerated into an n-type region of the pn-junction. The radiation source can have a low operating voltage, a high switching speed, and provides great design freedom. High intensity can be provided, e.g., by the use of large or multiple sources. The pn-junction can be doped with impurities to increase emission of radiation at a desired frequency and increase the efficiency of the device. For protection, the pn-junction may be covered by a layer of transparent oxide. By reverse biasing the pn-junction with a potential difference at least 4V, radiation of wavelength 300 nm or less can be obtained. The pn-junction source of the present invention can replace conventional radiation sources and be using in connection with a mask/contrast device, or can be used to replace both the conventional radiation source and the mask/contrast device.

System and method to pattern an object through control of a radiation source

The present invention provides a lithographic apparatus, including: a substrate table constructed to hold a substrate; a projection system configured to project a radiation beam through an exposure slit area onto a target portion of the substrate; a patterning device configured to import the radiation beam with a pattern in its cross-section to form a patterned radiation beam, the patterned radiation beam at the target portion of the substrate being in focus over a depth of focus; and a measurement system that is arranged to measure a surface topography of at least part of the target portion, wherein the projection system is arranged to adjust a dimension of the exposure slit area to form an adjusted exposure slit area over which surface topography variations are equal to or smaller than the depth of focus.

Lithographic apparatus and device manufacturing method

Radiation source, lithographic apparatus, and device manufacturing method

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Veldhoven, Netherlands

Arnold Sinke