International Business Machines Corporation

Arnold I Baise

Jon Alfred Casey

James N Humenik

Robert W Nufer

John Ulrich Knickerbocker

Charles Hampton Perry

Sarah Huffsmith Knickerbocker

Srinivasa S Reddy

Mark A Takacs

John Acocella

Steven M Kandetzke

Renuka S Divakaruni

George Czornyj

Richard A Bates

Anthony Mastreani

Daniel P Kirby

Lovell B Wiggins

David R Clarke

Salvatore J Scilla

Amy T Matts

Werner E Dunkel

Allen J Dam

Ray M Bryant

Lawrence D David

Ajay Prabhakar Giri

Anthony W Wu

Peter A Agostino

Liang-Choo Hsia

Harbans S Sachdev

John Martin Burns

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Process for fabricating a low dielectric composite substrate

Low dielectric composite substrate

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

An insulating or masking film for semiconductor devices formed by curing applied coatings of biphenylene end-capped quinoxaline polymers.

Biphenylene end-capped quinoxaline polymers and their use as insulating

The adhesion of organic resins to substrate materials is increased by depositing on the substrate a coating of a plasma polymerized unsaturated organophosphine.

Process for adhering an organic resin to a substrate by means of plasma

A protective coating is formed on an integrated circuit device by coating the device with a solution of acetylene terminated, branched polyphenylene prepolymer material and heating the material to form a thermoset crosslinked polymer layer. Selectively patterned portions may be provided when, after the coating step and prior to the heating step, the steps of imagewise exposure to radiation and rinsing with an organic solvent are carried out.

Acetylene terminated, branched polyphenylene resist and protective

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Wappingers Falls, NY, United States of America

Arnold I Baise