International Business Machines Corporation

Arnold Halperin

Leping Li

Steven G Barbee

Michael E Scaman

Tony F Heinz

Edward John Yarmchuk

John D Mackay

Arthur E Falls

Alejandro Gabriel Schrott

John Peter Karidis

Robert J Von Gutfeld

Charles Philippe Tresser

Arthur R Zingher

Li-Cheng Richard Zai

Daniel Guidotti

Huntington W Curtis

Danny C Wong

Ka-Chiu Woo

Shinwu Chiang

Cyprian Emeka Uzoh

Thomas H DiStefano

Paul Andrew Moskowitz

Chai Wah Wu

Robert Stephen Olyha, Jr

Joseph D Rutledge

Donald Merte

Charles J Hendricks

Rock Nadeau

Bernell E Argyle

Stephen Alan Cohen

William Joseph Surovic

Thomas Picunko

Brian J Wojszynski

Anne Elizabeth McGuire

Thomas H Di Stefano

Gary R Doyle

Christopher W Cline

Robert B Lipori

Francis Walter Kazak

Kevin L Holland

Richard Mars Ruggiero

William Joseph Surovie

Vincent A Arena

A method and apparatus for the non-contact electrical test of both opens and shorts in electronic substrates. Top surface electrical test features are exposed to an ionization source under ambient conditions and the subsequent charge build up is measured as a drain current by probes contacting corresponding bottom surface features. Opens are detected by an absence of a drain current and shorts are detected by turning off the ionization source and re-measuring the bottom surface probes with a varying bias applied to each probe in the array.

Ionization test for electrical verification

A system and method for locating a circuit defect, such as a short or an incipient open, in an electric circuit in a workpiece, such a Printed Circuit Board (PCB) or MultiChip Module (MCM). The circuit is connected to a device for sensitively measuring any resistance change. A thermal stimulus is applied to various subsets of the surface of the workpiece, the thermal stimulus being temporally modulated, and the resistance change measurement correlated with this modulation. By applying well-designed thermal stimulus subsets, resistance measurements may be logically combined which correspond to the plural thermal stimulus subsets. Further, the search region where the defect may be located may be iteratively refined. By measuring the time delay between the thermal stimulus and corresponding resistance change, the depth of a defect below the surface of the workpiece is further determined. Thus the system and method efficiently and accurately locates a defect in three dimensions, even if the workpiece is large, and the defect is small and underneath the surface.

Thermal modulation system and method for locating a circuit defect

An apparatus for testing structures in semiconductor wafers. The apparatus includes at least one test probe. At least one tool measures and controls deceleration of the at least one test probe as it approaches a surface of a structure in the semiconductor wafer.

Method to test devices on high performance ULSI wafers

A method of locating in a non-destructive and non-invasive manner power plane-to-power plane shorts or I/O net-to-power plane shorts found in a printed circuit board or a multi-chip-module by way of a magnetic field generating probe is described. Thousands of nets can be simultaneously tested to detect not only the presence of a short but also to accurately pinpoint its position. For high resistance shorts, the probe is provided with a pot core housed inductor located at its tip, and is used at low frequencies to minimize the effect of the capacitive impedance between the power planes. For low resistance shorts, the probe is used at high frequencies, delivering equal but opposite current to each of two matched inductors at the tip of the probe to maximize mutual inductive coupling while minimizing electrostatic capacitive coupling with the board or module. In both cases, the highest current stress is on the probe rather than on the expensive and fragile package under inspection. This allows the test to be both more sensitive to high resistance shorts at low frequencies and is less destructive, thereby being less likely to blow filamentary shorts due to high current stresses through the board or module.

Method for detecting power plane-to-power plane shorts and I/O net-to power plane shorts in modules and printed circuit boards

Thermal modulation system and method for locating a circuit defect such as a short or incipient open independent of a circuit geometry

A method and system for preventing counterfeiting of an item, include an interrogatable tag attached to the item. The item includes visible indicia for comparison with secret, non-duplicable information stored in the tag designating authenticity.

Method and system for preventing counterfeiting of high price wholesale and retail items

An apparatus and corresponding method for detecting, locating, or defining a short in a thin-film module. The apparatus includes a mechanical fixture supporting the module. A current source provides a current pulse to the module which produces a magnetic field and heating nearby the short which turns on and off as the pulsed current in the short turns on and off. Polarized light is directed onto the module, with an intermediate element disposed between the module and the source of the polarized light. The intermediate element may be a stress birefringent coating (e.g., a polyimide insulating layer) disposed on the module and onto which the polarized light is directed. The sample is rotated 0 to 45 degrees to maximize the birefringent effect. Alternatively, the intermediate element may be a magneto-optical Faraday rotator. A microscope is used to observe the module, facilitating identification of a short by the twisting of the polarization of the light as the short expands and shrinks in response to the heating or in response to the localized magnetic field. The preferred rotator is a composite having a garnet substrate, an iron garnet film disposed on the substrate, and a thin aluminum mirror layer disposed on the iron garnet film. The apparatus and method of the present invention have several applications.

Method and apparatus for locating power plane shorts using polarized

A detachable keyboard for a telephone set is provided in the form of a keyboard card clipped to the headset, which is completely detached from the body when unclipped. Wireless communication between the handset body and keyboard is used when the card is unclipped, while contacts are activated in the clipped position so that the wireless handset then functions as in the case of a non detachable keyboard.

Hand held telephone set with separable keyboard

The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.

In-situ monitoring and control of conductive films by detecting changes

An apparatus for rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process by a polisher is provided with a sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process, a conductor coupled to the sensor for receiving the signal, the conductor fixed to the rotatable wafer carrier, a contact coupled to the conductor, the contact fixed to a stationary drive arm, and signal transfer means coupled to the contact for transferring the signal to a monitoring means.

Rotary signal coupling for chemical mechanical polishing endpoint

In-situ monitoring of the change in thickness of films

Rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process. A sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process is coupled to a bottom half of a rotary transformer fixed to a rotating portion of the polisher. A top half of the rotary transformer, coupled to the bottom half of the rotary transformer, is fixed to a stationary portion of the polisher. The signal from the sensor is thus coupled through the rotary transformer to a process monitor.

In-situ monitoring of conductive films on semiconductor wafers

A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.

Chemical mechanical polishing endpoint process control

A method and apparatus for endpoint detection in removal of a film from a semiconductor wafer is provided, with a sensor for creating a signal responsive to the film removal process, a positive feedback amplifier coupled to the sensor, the positive feedback amplifier having a mode selector, and an analyzer coupled to the positive feedback amplifier.

Endpoint detection for chemical mechanical polishing using frequency or

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Arnold Halperin