Nxp B.v.

Arnold Benedictus Van Der Wal

Joan Wichard Strijker

Maarten Jacobus Swanenberg

Antonius Maria Gerardus Mobers

Dimitar Milkov Dochev

Described herein is an N type extended drain transistor formed from a semiconductor on insulator (SOI) wafer. The transistor has a buried P type region formed by the selective implantation of P type dopants in a semiconductor layer of the wafer at a location directly below a drift region of the transistor. The transistor also includes a source located in a P well region and a drain. The buried P type region is in electrical contact with the P well region. The N type drift region, the source, and the drain are also located in a portion of the semiconductor layer surrounded by dielectric isolation. A buried dielectric layer located below the portion of the semiconductor layer electrically isolates the portion of the semiconductor layer from a semiconductor substrate located below the buried dielectric layer.

Extended drain NMOS transistor with buried P type region

A power converter comprises an inductor (L) and a main switch (M) having a main current path, the inductor (L) and the main current path are arranged in series to receive a DC-input voltage (VIN). A control circuit (CC) controls on-periods (Ton) and/or off-periods (Toff) of the main switch (M) to stabilize an output voltage (VO) supplied to a load (LO). The control circuit (CC) further has an input (IN) to receive a measuring signal (MS) to protect the main switch (M) against situations of overvoltage. A measuring circuit (MC) is coupled to a junction (J) of the inductor (L) and the main current path to obtain the measuring signal (MS) which is indicative of a voltage across the main current path. Preferably, the measuring circuit (MC) comprises a peak-clamp.

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Portland, OR, United States of America

Arnold Benedictus Van Der Wal