Asml Netherlands B.v.

Asml Holding N.v.

Other

Lsi Logic Corporation

Agere Systems Guardian Corp.

Micronic Laser Systems Ab

Asm Lithography B.v.

Elith LLC

Arno Jan Bleeker

Kars Zeger Troost

Pieter Willem Herman De Jager

Karel Diederick Van Der Mast

Arie Jeffrey Den Boef

Azat M Latypov

Henricus Petrus Maria Pellemans

Maurits Van Der Schaar

Antoine Gaston Marie Kiers

Mircea Dusa

Johannes Jacobus Matheus Baselmans

Erik Roelof Loopstra

Vadim Yevgenyevich Banine

Cheng-Qun Gui

Dominicus Jacobus Petrus Adrianus Franken

Justin Lloyd Kreuzer

Heine Melle Mulder

Patricius Aloysius Jacobus Tinnemans

Hendrik Jan Hidde Smilde

Markus Gerardus Martinus Maria Van Kraaij

Stanislav Y Smirnov

Jozef Petrus Henricus Benschop

Pieter Kruit

Timotheus Franciscus Sengers

Patrick Warnaar

Theodorus Petrus Maria Cadee

Huibert Visser

Michael Kubis

Mark L Oskotsky

Hans Butler

Jang Fung Chen

Joeri Lof

Johannes Hubertus Josephina Moors

Engelbertus Antonius Fransiscus Van Der Pasch

Wim Tjibbo Tel

Koen Jacobus Johannes Maria Zaal

Harmen Klaas Van Der Schoot

Marc Wilhelmus Maria Van Der Wijst

Johannes Onvlee

Stephen Roux

Christian Wagner

Sven Antoin Johan Hol

Markus Franciscus Antonius Eurlings

Robert John Socha

Paulus Martinus Maria Liebregts

Henricus Wilhelmus Maria Van Buel

Armand Eugene Albert Koolen

Nicholas K Eib

Antonius Johannes Josephus Van Dijsseldonk

Donis George Flagello

Vladimir Vitalevitch Ivanov

Wenceslao A Cebuhar

Youri Johannes Laurentius Maria Van Dommelen

Paul Frank Luehrmann

Jason Douglas Hintersteiner

Cedric Desire Grouwstra

Yuli Vladimirsky

Lev Ryzhikov

Willem Marie Julia Marcel Coene

Peter Conrad Kochersperger

Cédric Désiré Grouwstra

Borgert Kruizinga

Rene Theodorus Petrus Compen

Oscar Franciscus Jozephus Noordman

Alexander Matthijs Struycken

Laurentius Catrinus Jorritsma

Johannes Hendrikus Gertrudis Franssen

Louis John Markoya

Ruud Antonius Catharina Maria Beerens

Andrew W McCullough

Neal Patrick Callan

Lucas Henricus Johannes Stevens

Erwin John Van Zwet

Laurentius Cornelius De Winter

Sherman K Poultney

Vladimir Mihailovitch Krivtsun

Konstantin Nikolaevitch Koshelev

Konstantin Nikolaevich Koshelev

Bernardus Antonius Slaghekke

Christopher John Mason

Vladimir Vitalevich Ivanov

Erik Petrus Buurman

Wilhelmus Henricus Theodorus Maria Aangenent

Hedser Van Brug

Reinder Teun Plug

Albertus Victor Gerardus Mangnus

Maikel Robert Goosen

Michael L Nelson

Aschwin Lodewijk Hendricus Johannes Van Meer

Erwin Paul Smakman

Denis Alexandrovich Glushkov

Jacques Cor Johan Van Der Donck

Lambertus Gerardus Maria Kessels

Pieter Renaat Maria Hennus

Pavel Stanislavovich Antsiferov

Harm-Jan Voorma

Nabila Baba-Ali

Michiel Peter Oderwald

Niels Johannes Maria Bosch

Rudy Jan Maria Pellens

Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.

Pulsed charged-particle beam system

An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

Method and apparatus for angular-resolved spectroscopic lithography characterization

An alignment system aligns a laser beam to a desired position in a reference plane and to a desired direction in the reference plane. The system diffracts the laser light into different diffraction orders that are projected onto a detection plane using different lenses. As the locations of the projections of the different diffraction orders in the detection plane respond differently to changes in position and in direction of the beam in the reference plane, the locations of the projections enable to determine how to adjust the beam so as to get the beam properly aligned. The diffraction and the projection can be implemented by a hologram.

Optical device and associated system

A laser radiation source for a lithographic tool comprising a laser module to emit a first laser beam having a first wavelength and a second laser beam having a second wavelength, a beam separation device to separate the optical paths of the first and second laser beams and substantially recombine the optical paths, a beam delivery system to direct the first and second laser beams to a fuel target and an optical isolation apparatus to: adjust the polarization state of the first laser beam, adjust the polarization state of the second laser beam and to block radiation having the adjusted polarization states such that the reflection of the first laser beam and the reflection of the second laser beam are substantially blocked from propagating towards the laser module.

Radiation source

Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.

Metrology method and inspection apparatus, lithographic system and device manufacturing method

A radiation modulator for a lithography apparatus, a lithography apparatus, a method of modulating radiation for use in lithography, and a device manufacturing method is disclosed. The radiation modulator for a lithography apparatus may have a plurality of waveguides supporting propagation therethough of radiation having a wavelength less than 450 nm; and a modulating section configured to individually modulate radiation propagating in each of the waveguides in order to provide a modulated plurality of output beams.

Radiation modulator for a lithography apparatus, a lithography apparatus, a method of modulating radiation for use in lithography, and a device manufacturing method

A device having a waveguide formed of a continuous body of material that is transparent to radiation that passes through the waveguide, wherein the body has an input surface and an output surface, and a cooler configured to cool the input surface and/or the output surface. An exposure apparatus having a programmable patterning device that comprises a plurality of radiation emitters, configured to provide a plurality of radiation beams; and a projection system, comprising a stationary part and a moving part, configured to project the plurality of radiation beams onto locations on a target that are selected based on a pattern, wherein at least one of the radiation emitters comprises a waveguide configured to output a radiation beam that comprises unpolarized and/or circularly polarized radiation.

Device, lithographic apparatus, method for guiding radiation and device manufacturing method

The invention relates to intensity values for a plurality of beams used to irradiate a plurality of locations on a target are determined with reference to the position and/or rotation of the locations. Also provided is an associated lithographic or exposure apparatus, an associated device manufacturing method and an associated computer program.

Lithographic apparatus, device manufacturing method and computer program

A lithographic apparatus is provided and configured to project a patterned beam of radiation onto a substrate. The apparatus has a measurement system to provide measurement data related to a thickness of a resist layer on the substrate, and a controller to control the operation of the lithographic apparatus such that a radiation intensity level in the patterned beam to be projected onto the substrate is controlled based on the measurement data.

Lithographic apparatus and device manufacturing method

There is disclosed an exposure apparatus, a device manufacturing method and a method of manufacturing an attenuator. According to an embodiment, the exposure apparatus includes a programmable patterning device configured to provide a plurality of individually controllable radiation beams; a projection system configured to project each of the radiation beams onto a respective location on a target; and an attenuator configured to reduce a standard deviation in maximum radiation flux or background exposure level that can be applied to the target by the radiation beams as a function of position on the target.

Lithography apparatus, a device manufacturing method, a method of manufacturing an attenuator

A lithographic or exposure apparatus has a projection system and a controller. The projection system includes a stationary part and a moving part. The projection system is configured to project a plurality of radiation beams onto locations on a target. The locations are selected based on a pattern. The controller is configured to control the apparatus to operate in a first mode or a second mode. In the first mode the projection system delivers a first amount of energy to the selected locations. In the second mode the projection system delivers a second amount of energy to the selected locations. The second amount of energy is greater than the first amount of energy.

A lithographic apparatus having a plurality of individually controllable radiation source units each providing a portion of a patterned beam of radiation, a control system configured to monitor a parameter of performance of each of the individually controllable radiation source units, and a replacement mechanism configured to replace one of the individually controllable radiation source units with a replacement unit responsive to the control system determining that a criterion has been met based on the monitored parameter of performance.

Lithographic apparatus, method for maintaining a lithographic apparatus and device manufacturing method

An exposure apparatus including a projection system configured to project a plurality of radiation beams onto a target; a movable frame that is at least rotatable around an axis; and an actuator system configured to displace the movable frame to an axis away from an axis corresponding to the geometric center of the movable frame and to cause the frame to rotate around an axis through the center of mass of the frame.

Growing community of inventors

Westerhoven, Netherlands

Arno Jan Bleeker