Hitachi Energy Ltd

Hitachi Energy Switzerland Ag

Arne Schroeder

Gerd Schlottig

Michele Luvisotto

Slavo Kicin

Fabian Mohn

Didier Cottet

Wojciech Piasecki

Jürgen Schuderer

Juergen Schuderer

Chunlei Liu

Bernhard Wunsch

Filip Grecki

Niko Pavlicek

Torsten Nilsson

Farhad Yaghoubi

A power semiconductor module includes a plurality of semiconductor switches arranged in a plurality of groups. Each semiconductor switch has a first terminal and a second terminal having a controlled path therebetween and a control terminal. A plurality of first group contacts are each connected to the first terminals of the semiconductor switches of a respective group and a plurality of second group contacts are each connected to the second terminals of the semiconductor switches of the respective group. A plurality of control group contacts are each connected to the control terminals of the semiconductor switches of the respective group. An interconnection bridge connects the control group contacts and the first group contacts of the plurality of groups. The interconnection bridge has a layer structure with a first conductive layer and a second conductive layer being separated by an insulating layer.

Power semiconductor module

A power semiconductor module includes a main substrate and power semiconductor chips. Each power semiconductor chip is bonded to the main conductive layer with the first power electrode. A first group of the power semiconductor chips is connected in parallel via the second power electrodes and a second group of the power semiconductor chips is connected in parallel via the second power electrodes. The module also includes a first insulation layer and a first conductive layer overlying the first insulation layer as well as a second insulation layer and a second conductive layer overlying the second insulation layer. The first conductive layer provides a first gate conductor area and a first auxiliary emitter conductor area for the first group. The second conductive layer provides a second gate conductor area and a second auxiliary emitter conductor area for the second group.

Power semiconductor module with low inductance gate crossing

A converter apparatus includes a string of electrically interconnected modules that includes a first group of modules comprising a first module and a second group of modules comprising a second module. A first screen is connected to a first defined electric potential and is located adjacent the first group of modules and a second screen is connected to a second defined electric potential and is located adjacent the second group of modules. During operation of the converter apparatus a resonance loop is created from the first module via the first and second screens and the second module back to the first module. A damping unit is located in the resonance loop and is set to dampen electromagnetic noise.

Converter arrangement

Growing community of inventors

Bern, Switzerland

Arne Schroeder