Evonik Degussa Gmbh

Arne Hoppe

Markus Hallack

Alexey Merkulov

Juergen Steiger

Duy Vu Pham

Heiko Thiem

Dennis Fruehling

Anita Neumann

Yvonne Damaschek

Nicole Brausch

Gerhard Renner

Jürgen Steiger

Christian Brinkmoeller

Sonja Merkulov

Ralf Anselmann

Hans-Jürgen Nettelnbreker

Holger Pfeifer

Adrian Drexler

Björn Niemann

Stephan Stolzenberg

Christian BRINKMÖLLER

Dennis FRÜHLING

The present invention, relates, to a process, for producing structured coatings, in which a coating composition comprising at least one inorganic binder, at least one oxide pigment which, after addition of a mixture consisting of 15 ml of 1 M oxalic acid and 15 ml of 20% aqueous hydrochloric acid based on 1 g of substance, under standard conditions, leads to a temperature rise of at least 4&#xb0; C., and at least one solvent is applied to a substrate, the resulting coating composition film is partially coated with a photoresist and the substrate coated with the coating composition and the photoresist is treated with an acid, to the structured layers obtainable by the process and to the use thereof.

Process for producing structured coatings

The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InXwhere X=F, Cl, Br, I with a secondary amine of the formula R'NH where R&#x2032;=alkyl in a molar ratio of from 8:1 to 20:1 to the indium trihalide in the presence of an alcohol of the generic formula ROH where R=alkyl in at least one solvent, a process for producing them, their use for producing indium oxide-containing or (semi)conducting layers and processes for producing indium oxide-containing layers which use the formulation of the invention.

Formulations for producing indium oxide-containing layers, process for producing them and their use

The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InXwhere X=F, Cl, Br, I with a secondary amine of the formula R'NH where R&#x2032;=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R=alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.

Process for preparing indium alkoxide compounds, the indium alkoxide compounds preparable by the process and the use thereof

The present invention relates to halogenated indium oxo alkoxides of the generic formula InO(OH)(OR)X(ROH)where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X&#x2550;F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.

Indium oxoalkoxides for producing coatings containing indium oxide

The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MO(OR)[O(R'O)H]X[R&#x2033;OH]where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R&#x2032;, R&#x2033;=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.

Method for the production of layers containing indium oxide

The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MO(OR)[O(R'O)H]X[R&#x2033;OH], where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R&#x2032;, R&#x2033;=organic group, X&#x2550;F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.

Method for the production of metal oxide-containing layers

The present invention relates to a fluid phase method for producing indium oxide-containing layers, in which a composition comprising at least one indium oxo-alkoxide of the generic formula MO(OR)[O(R'O)H]XY[R&#x2033;OH]with x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=1-20, d=0-25, e=0, 1, M=In, R, R&#x2032;, R&#x2033;=organic remainder, X&#x2550;F, Cl, Br, I, and Y&#x2550;&#x2014;NO, &#x2014;NO, where b+c is =1-20 and at least one solvent is applied to a substrate, optionally dried, and converted into an indium oxide-containing layer, to the indium oxo-alkoxides of the indicated generic formula, to coating compositions comprising said indium oxo-alkoxides, to layers that can be produced by means of the method according to the invention, and to the use of said layers.

Method for producing indium oxide-containing layers

The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250&#xb0; C., to the layers producible by this process, and to the use thereof.

Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use

The present invention relates to a liquid indium alkoxide-containing composition comprising at least one indium alkoxide and at least three solvents L, Land L, in which the solvent Lis selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and the difference between the boiling points of the two solvents Land Lunder SATP conditions is at least 30&#xb0; C., to processes for preparation thereof and to the use thereof.

Compositions containing indium alkoxide, method for the production thereof, and use thereof

The present invention relates to a method for producing a semi-conductor laminate comprising a first and a second metal oxide layer as well as a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer. The first and second metal oxide layers are formed accordingly from a first and a second liquid phase. The present invention also relates to a semi-conductor laminate that can be obtained from such a method, and to electronic components comprising such a semi-conductor laminate.

Method for producing high-performing and electrically stable semi-conductive metal oxide layers, layers produced according to the method and use thereof

The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.

Process for producing indium oxide-containing layers

The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength &#x2266;360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.

Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof

The present invention relates to a process for the preparation of indium(III) halodialkoxides of the generic formula InX(OR)where X=F, Cl, Br, I and R=alkyl radical, alkoxyalkyl radical, in which a composition (A) comprising an indium trihalide InX, where X=F, Cl, Br and/or I, and at least one alcohol of the generic formula ROH, where R=alkyl radical, alkyloxyalkyl radical, is reacted with a composition (B) comprising at least one secondary amine of the generic formula R'NH, where R&#x2032;=alkyl radical, to the indium(III) halodialkoxides which can be prepared by the process and to their use.

Process for the preparation of indium chlordialkoxides

The present invention relates to halogenated indium oxo alkoxides of the generic formula InOX(OR)(R'CH(O)COOR&#x2033;)(HOR)(HNR&#x2032;&#x2033;)where X&#x2550;F, Cl, Br and/or I, R&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R&#x2032;&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R&#x2033;&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R&#x2032;&#x2033;&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.

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Herne, Germany

Arne Hoppe