Robert Boschgmbh

Arnd Kaelberer

Johannes Classen

Jochen Reinmuth

Lars Tebje

Hans Artmann

Christian Zielke

Peter Borwin Staffeld

Oliver Breitschaedel

Heribert Weber

Jens Frey

Helmut Baumann

Dietrich Schubert

Patrick Wellner

Roland Scheuerer

Mirko Hattass

Axel Franke

Frank Reichenbach

Alexander Buhmann

Marian Keck

Ralf Noltemeyer

Robert Sattler

Christian Bierhoff

Hans-Joerg Faisst

Peter Sudy

Holger Rank

Ramona Maas

Freider Haag

A pivot apparatus, in particular a pivot apparatus for a micromirror, a fixed base frame being connected, directly or indirectly via an intermediate frame, to a pivotable carrier element. Spring elements having flexural springs are respectively disposed between the base frame and carrier element, base frame and intermediate frame, and intermediate frame and carrier element. The use of flexural springs enables good thermal coupling between the individual components, and an increase in robustness. The pivot apparatus can be embodied in particular as a microelectromechanical system.

Pivot apparatus for a micromirror, and illumination apparatus having a pivot apparatus for a micromirror

A method for manufacturing a multi-layer MEMS component includes: providing a multi-layer substrate that has a monocrystalline carrier layer, a monocrystalline functional layer having a front side and a back side, and a bonding layer located between the back side and the carrier layer; growing a first polycrystalline layer over the front side of the monocrystalline functional layer; removing the monocrystalline carrier layer; and growing a second polycrystalline layer over the back side of the monocrystalline functional layer.

Method for producing a multilayer MEMS component, and corresponding multilayer MEMS component

An etching device and an etching method. The etching device includes an etching chamber and a chuck located therein for clamping a substrate to be etched, a plasma generating device surrounding the etching chamber in an area and a gas nozzle distribution device for introducing etching gas, which is situated above the chuck in such a way that an etching gas stream is directed essentially perpendicular to a surface of the substrate to be etched. A moving mechanism may be used to change the distance between the gas nozzle distribution device and the chuck as a function of the etching mode.

Etching device and etching method

A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device includes an ASIC wafer having a front side and a rear side, and a rewiring system, formed on the front side of the ASIC wafer, which includes a plurality of stacked strip conductor levels and insulation layers. The pressure sensor device also includes a MEMS wafer having a front side and a rear side, a first micromechanical functional layer which is formed above the front side of the MEMS wafer, and a second micromechanical functional layer which is formed above the first micromechanical functional layer.

Micromechanical pressure sensor device and corresponding manufacturing method

A method for manufacturing microelectromechanical structures in a layer sequence and a corresponding electronic component having a microelectromechanical structure. The method includes provision of a carrier substrate including a first surface, an application of an insulation layer onto the first surface, an epitaxial growth of a first silicon layer onto the insulation layer, a structuring of the first silicon layer for forming trenches in the first silicon layer, a passivation of the first silicon layer, whereby the trenches are filled and a passivation layer is formed on a side facing away from the first surface, a structuring of the passivation layer, sacrificial areas and functional areas being formed in the first silicon layer, and the sacrificial areas are free of the passivation layer, at least at some points, on a side facing away from the carrier substrate, and, finally, removal of the sacrificial areas.

Method for manufacturing microelectromechanical structures in a layer sequence and a corresponding electronic component having a microelectromechanical structure

A micromechanical sensor device includes an evaluation circuit formed in a first substrate, and an MEMS structure which is situated in a cavity delimited by a second substrate and a third substrate, the MEMS structure and the second substrate being situated on top of each other, the MEMS structure being functionally connected to the evaluation circuit via a contact area, the contact area between the MEMS structure and the first substrate being situated essentially centrally on the second substrate and essentially centrally on the first substrate and has an essentially punctiform configuration, proceeding radially from the contact area, a clearance being formed between the first substrate and the second substrate.

Micromechanical sensor device

A micromechanical pressure sensor device includes: an MEMS wafer having a front side and a rear side; a first micromechanical functional layer formed above the front side of the MEMS wafer; and a second micromechanical functional layer formed above the first micromechanical functional layer. A deflectable first pressure detection electrode is formed in one of the first and second micromechanical functional layers. A fixed second pressure detection electrode is formed spaced apart from and opposite the deflectable first pressure detection electrode. An elastically deflectable diaphragm area is formed above the front side of the MEMS wafer. An external pressure is applied to the diaphragm area via an access opening in the MEMS wafer, and the wafer is connected to the deflectable first pressure detection electrode via a plug-like joining area.

A micromechanical sensor device, having a first unhoused sensor unit, and at least one second unhoused sensor unit, the sensor units being functionally connected to one another, the sensor units being essentially vertically configured one over the other so that a sensor unit having a larger footprint completely covers a sensor unit having a smaller footprint.

A micromechanical component includes a substrate having a cavern structured into the same, an at least partially conductive diaphragm, which at least partially spans the cavern, and a counter electrode, which is situated on an outer side of the diaphragm oriented away from the substrate so that a clearance is present between the counter electrode and the at least partially conductive diaphragm, the at least partially conductive diaphragm being spanned onto or over at least one electrically insulating material which at least partially covers the functional top side of the substrate, and at least one pressure access being formed on the cavern so that the at least partially conductive diaphragm is bendable into the clearance when a gaseous medium flows from an outer surroundings of the micromechanical component into the cavern. Also described is a manufacturing method for a micromechanical component.

Micromechanical component and manufacturing method for a micromechanical component

A micromechanical component includes: a substrate; a seismic weight joined to the substrate at a first suspension mount; at least one first electrode for measuring a motion of the seismic weight in a first direction, the first electrode being joined to the substrate at a second suspension mount; and at least one second electrode for measuring a motion of the seismic weight in a second direction different from the first direction, the second electrode being joined to the substrate at a third suspension mount. The first electrode is mechanically connected to the second suspension mount with the aid of a support arm and set apart from the second suspension mount.

Micromechanical component and method for manufacturing a micromechanical component

A capacitive micromechanical acceleration sensor has a substrate and a micromechanical functional layer situated above the substrate. A seismic mass, a suspension and fixed electrodes are situated in the micromechanical functional layer. The fixed electrodes are electrically connected to one another on a first and second side, respectively, of the suspension using buried conductor tracks. The fixed electrodes are connected to one another between the first and second side of the suspension using first and second conductors in the micromechanical functional layer.

Acceleration sensor having an electrode bridge

A method for determining the sensitivity of a sensor provides the following steps: a) first and second deflection voltages are applied to first and second electrode systems of the sensor, respectively, and first and second electrostatic forces are exerted on an elastically suspended seismic mass of the sensor by the first and second electrode systems, respectively, and a restoring force is exerted on the mass as a result of the elasticity of the mass, and a force equilibrium is established among the first and second electrostatic forces and the restoring force, and the mass assumes a deflection position characteristic of the force equilibrium, and an output signal characteristic of the force equilibrium and of the deflection position is measured; and b) the sensitivity of the sensor is computed on the basis of the first and second deflection voltages.

Method for determining the sensitivity of an acceleration sensor or magnetic field sensor

An acceleration sensor is described that has a base substrate, a first electrode structure situated in stationary fashion relative to the base substrate, a sensor element having a first electrode area, and a spring device having at least one spring element. Via the spring element, the sensor element is coupled to the base substrate so that the sensor element is deflected relative to the base substrate as the result of an acceleration acting on the sensor element, thus changing the distance between the first electrode structure and the first electrode area. The sensor element and the first electrode structure are situated at least partially one over the other and are formed from a common functional layer.

Acceleration sensor and method for its manufacture

A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

Device made of single-crystal silicon

An acceleration sensor includes a substrate, a rocker mass, a z spring connected to the rocker mass, which allows the rocker mass to rotate about an axis, and at least one additional spring system connected to the substrate and the rocker mass. The additional spring system allows the rocker mass to deflect in an x or y direction oriented parallel or perpendicular to the axis. The z spring or the additional spring system allows the rocker mass to deflect in a y or x direction oriented parallel or perpendicular to the axis.

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Schlierbach, Germany

Arnd Kaelberer