Ion Beam Applications S.a.

Arnaud Pin

Rudi Labarbe

Lucian Hotoiu

Yves Claereboudt

Gabriel Krier

A treatment device includes a pulsed particles accelerator and a processor for controlling the latter to deliver a treatment plan by deposition at HDR of charged particles into a flash volume (Vht) by PBS. To shorten the time for depositing a target dose (Dti) into the cells spanned by the flash spots (Si) of the flash volume (Vht), the flash spots are combined into k sets of n flash spots (Si). After depositing a jpulse dose (Dij) into the cells spanned by a iflash spot (Si) the beam commutes from the ith flash spot (Si) to a next (i+1)th flash spot according to a flash scanning subsequence to deposit a jth dose into the cells spanned by each of the subsequent flash spots of the flash scanning subsequence, until returning to the ith flash spot to deposit a (j+1)th dose (Di(j+1)), and so on When all the cells spanned by all the flash spots of a set have received their corresponding target dose, the beam moves to a next set of combined flash spots and repeats the foregoing pulse deposition steps.

Treatment device for delivering a treatment plan for flash deposition with an accelerator of charged particles by pencil beam scanning

A treatment planning system for generating a plan for treatment by radiation with charged particles beams applied by pencil beam scanning onto a target tissue comprising tumoral cells is provided. The treatment planning system performs a dose definition stage defining the doses to be deposited within the peripheral surface, a beam definition stage defining positions and dimensions of the beamlets of the PBS during the at least one high rate fraction, the beams definition stage including a dose rate definition stage comprising at least one high rate fraction, and a beamlets scanning sequence stage defining a scanning sequence of irradiation of the beamlets. The beamlets scanning sequence stage optimizes a time sequence of beamlets emission such that at the end of a fraction j, a dose is deposited onto at least a predefined fraction of each specific volume at a mean deposition rate superior or equal to a predefined value.

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Louvain-la-Neuve, Belgium

Arnaud Pin