Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Trixell S.a.s.

Arnaud Peizerat

Marc Arques

Jean-Luc Martin

Jean-Pierre Rostaing

Yvon Cazaux

Bertrand Dupont

Assim Boukhayma

Margaux Vigier

Michäel Tchagaspanian

Vigier Margaux

Fadoua Guezzi

An image sensor including pixels, each pixel including a photodetector and a circuit for reading out the quantity of charges collected by the photodetector at the end of a phase of charge collection by the photodetector. The image sensor further includes, for at least one of the pixels, a detection circuit capable, at least at two different times during the phase, of detecting whether the quantity of charges collected at the time by the photodetector of the pixel exceeds a threshold and, in the case where the quantity of charges collected at the time exceeds the threshold, of storing a first signal representative of the time and of resetting the photodetector.

Wide dynamic range image sensor

An electronic device includes a reference resistor, two first terminals between which the reference resistor is connected, and two second terminals between which a modified impedance value of the reference resistor is intended to be obtained. The electronic device also includes a first circuit that applies between the two second terminals a voltage substantially equal to that between the two first terminals, and a second circuit that flows between the two second terminals a second current the value of which corresponds to a fraction of a first current for flowing in the reference resistor between the two first terminals.

Device modifying the impedance value of a reference resistor

A CMOS pixel including a photodiode having a terminal connected to a potential GND and another terminal connected to a sense node by a first MOS transistor; a second MOS transistor connecting the sense node to a potential VDDH; and a third MOS transistor having its gate connected to the sense node, the transistors having a same gate insulator thickness, wherein the third transistor has a gate length and/or width smaller than those of the first and second transistors, wherein difference VDDH-GND is greater than the nominal voltage of the third MOS transistor, and wherein the body or drain region of the third transistor is connected to a potential VL between potentials VDDH and GND.

Low-noise CMOS image sensor

A detection device comprises an array of pixels, each pixel including a sensor and generating an oscillating signal (S); and a frequency detection circuit () for detecting the frequency of the oscillating output signal of one or more of the pixels, the frequency detection circuit having: a window generation circuit () adapted to generate at least one output signal (WIN_SEN) indicating the start and end times of a first time duration (TWINDOW) corresponding to a plurality of periods of the oscillating output signal; and one or more counters () adapted to receive at least one reference signal (TCOUNT, TREAD) indicating the start and end times of a reference time duration (TREF), and to quantify a difference between the first time duration and the reference time duration.

Method and circuit for reading an array of oscillators

An imaging device comprising comprises a matrix of pixels, at least one data conductor connected to several pixels of the matrix, organized row-wise and successively transporting signals delivered by respectively the pixels of the row and an electronic current generator supplying several pixels, each of the pixels comprising: a transistor delivering at the node of the pixel, the signal delivered by the pixel considered and wherein can flow a bias current from the current generator, and a first electronic switch connecting the node of the pixel to the data conductor associated with this pixel as a function of a selection signal of the pixel. Each of the pixels comprises a second electronic switch, distinct from the first electronic switch, joined to the node of the pixel, the current arising from the generator to be made to flow in the transistor as a function of the selection signal for the pixel.

Imaging device with zero ohmic drop in a data conductor

A CMOS image sensor including a pixel including: a photodiode in series with a MOS transistor between a first reference potential and a sense node; a MOS transistor connecting the sense node to a second reference potential; and a third MOS transistor assembled as a source follower between the sense node and a read circuit, wherein the oxide thickness of the third transistor is smaller than that of the first and second transistors, the voltage difference between the first and second reference potentials is greater than the maximum voltage capable of being applied between two terminals of the third transistor, and the body or drain region of the third transistor is connected to a third reference potential in the range between the first and second potentials.

CMOS image sensor

An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.

CMOS imaging device with three-dimensional architecture having reading circuits and an electronic processing circuit arranged on different substrates

A matrix microelectronic device includes elementary cells laid out according to a matrix. Each cell has a current source formed by a current source transistor. A source electrode of the transistor is connected to a source biasing conductor line of a plurality of source biasing conductor lines. A gate electrode of the transistor is connected to a gate biasing conductor line of a plurality of gate biasing conductor lines. A biasing device biases the gate biasing conductor lines and includes at least one first connection line that is connected to at least several of the gate biasing conductor lines. The biasing device includes a voltage generator or a current generator that causes a variation of potentials along the first connection line, thereby compensating a corresponding variation of potentials along the source biasing conductor lines. The device can include an addressing circuit for addressing horizontal lines or rows of the matrix.

Pixel matrix with compensation of ohmic drops on the power supplies

A high dynamic range imaging device including a first substrate with multiple pixels, each pixel having a photodetector associated with multiple read-out circuits. Each read-out circuit including a device for charging and discharging the photodetector that is associated with the read-out circuit. Each charging and discharging device being controlled by a charge and discharge activation signal imposing an integration time of the photodetector of each pixel associated with the read-out circuit. The device further including a second substrate, distinct from the first, with an electronic control circuit for controlling the charging and discharging devices, designed for generating multiple charge and discharge activation signals to be transmitted to the charging and discharging devices using electrical connections between the first and second substrates. Each pixel or group of pixels is associated to an activation signal imposing an integration time specific and appropriate to the pixel or group of pixels.

Imaging device with high dynamic range

A matrix microelectronic device comprising: a plurality of cells arranged according to a matrix, one or several conductive lines provided to carry a given potential and to which respectively one or several cells of a row of cells of the matrix are linked, a plurality of voltage regulating elements, wherein said regulating elements are connected respectively between a cell of said plurality of cells and one of said conductive lines, said given potential serving as polarisation potential of said regulating elements, wherein said regulating elements are respectively provided to apply to said given cell a regulated polarisation potential.

Matrix of pixels provided with voltage regulators

An analog/digital converter device associated with a detector of an image sensor, including: a comparator capable of receiving the analog signal and delivering a two-states output signal, able to adopt, depending on the analog signal, a first stable state or a second state, a charge injector capable of changing the analog signal by injection of at least one quantity of charges into the capacitor, and a mechanism for commanding the charge injector, capable of receiving the two-state signals and capable of triggering, depending on the two-state signals, plural injections of charges between at least two successive changes in state of the signal, from the first state to the second state and from the second state to the first state.

Image sensing microelectronic device with asynchronous analog-to-digital converter

The disclosure relates to a microelectronic image sensor device comprising: at least one detector formed by at least one photo-detector element, at least one integration capacitor associated to the photo-detector and capable of providing at least one analogue signal capable of varying at least according to a current provided by the detector, and analogue/digital conversion means for equalising charges comprising: a comparator, injector means capable of modifying the analogue signal by one or more injections, respectively of a given quantity of charge, into the capacitor, command means for charge injector means capable of modulating the given quantity of charge injected according to the intensity of said current.

Growing community of inventors

Grenoble, France

Arnaud Peizerat