S.o.i.tec Silicon on Insulator Technologies

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Soitec

Arnaud Garnier

Bruce Faure

Pierre Montmeat

Aurélie Tauzin

Anthony De Luca

Daniel Mermin

Laetitia Castagne

A serigraphy method for producing a soulder bump on the front surface of a substrate includes: forming a film on the front surface, forming an opening in the film, filling the opening with a souldering material, and removing the film. Forming a film on the front surface is preceded by the formation of an intermediate layer between the film and the front surface, the intermediate layer being adapted to exhibit a force of adherence at one and/or the other interface formed with the first front surface and the film lower than the force of adherence that can be formed between the film and the first front surface.

Method for producing a solder bump on a substrate surface

A process for obtaining a hybrid substrate that includes at least one active layer of Group III/N material for applications in the field of electronics, optics, photovoltaics or optoelectronics. The method includes selecting a source substrate of Group III/N material having a hexagonal single crystal crystallographic structure; carrying out an implantation of Hehelium ions into the source substrate through an implantation face which lies in a plane approximately parallel with the 'c' crystallographic axis of the material, at an implantation dose equal to or greater than 1&#xd7;10He/cmand 1&#xd7;10He/cm, to form therein a number of nanocavities defining a weakened zone which delimits the active layer; and transferring the active layer by applying an overall energy budget capable of causing detachment of the layer from the source substrate, wherein the budget also causes the nanocavities to grow into cavities.

Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material

A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.

Method of detaching a thin film by melting precipitates

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Grenoble, France

Arnaud Garnier