Soitec

Sony Semiconductor Solutions Corporation

Arnaud Castex

Marcel Broekaart

Ionut Radu

Bernard Aspar

Daniel Delprat

Gweltaz Gaudin

Oleg Kononchuk

Chrystelle Lagahe Blanchard

Gregory Riou

Eric Butaud

Laurent Marinier

Brice Tavel

Laurence Doutre-Roussel

A method for fabricating a semiconductor-on-insulator structure involves providing a donor substrate comprising a weakened zone delimiting a layer to be transferred, providing a receiver substrate, and bonding the donor substrate to the receiver substrate. The layer to be transferred is located on the bonding-interface side. A bonding wave is initiated at a first region on the periphery of the interface, and the wave is propagated toward a second region on the periphery of the interface opposite the first region. The difference in speed of propagation of the bonding wave between a central portion of the interface and a peripheral portion of the interface is controlled such that the speed of propagation of the bonding wave is lower in the central portion than in the peripheral portion. The donor substrate is detached along the weakened zone to transfer the layer to be transferred to the receiver substrate.

Method for manufacturing a semiconductor-on-insulator substrate

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

Heterostructure and method of fabrication

A semiconductor-on-insulator substrate for use in RF applications, such as a silicon-on-insulator substrate, comprises a semiconductor top layer, a buried oxide layer and a passivation layer over a support substrate. In addition, a penetration layer is provided between the passivation layer and the silicon support substrate to ensure sufficient high resistivity below RF features and avoid increased migration of dislocations in the support substrate. RF devices may be fabricated on and/or in such a semiconductor-on-insulator substrate.

Semiconductor-on-insulator substrate for rf applications

Semiconductor-on-insulator substrate for RF applications

Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in &#x3bc;m) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

Method for producing composite structure with metal/metal bonding

A method and device for evaluating inhomogeneous deformations in a first wafer bonded by molecular adhesion to a second wafer. This evaluation method includes the steps of making at least one reading of a plurality of measurement points, the reading corresponding to a surface profile of the first wafer along a predefined direction and over a predefined length, computing a second derivative from the measurement points of the surface profile and evaluating a level of inhomogeneous deformations in the first wafer according to the second derivative.

System and method for assessing inhomogeneous deformations in multilayer plates

The disclosure relates to a method of bonding by molecular adhesion comprising the positioning of a first wafer and of a second wafer within a hermetically sealed vessel, the evacuation of the vessel to a first pressure lower than or equal to 400 hPa, the adjustment of the pressure in the vessel to a second pressure higher than the first pressure by introduction of a dry gas, and bringing the first and second wafers into contact, followed by the initiation of the propagation of a bonding wave between the two wafers, while maintaining the vessel at the second pressure.

Method for bonding by means of molecular adhesion

The invention provides a method of bonding a first wafer onto a second wafer by molecular adhesion, the method comprising applying a point of initiation of a bonding wave between the first and second wafers, the method further comprising projecting a gas stream between the first wafer and the second wafer generally toward the point of initiation of the bonding wave while the bonding wave is propagating between the wafers. The invention also provides a bonding apparatus for carrying out the bonding method.

Method and apparatus for bonding together two wafers by molecular adhesion

A method of producing a composite structure comprises a step of producing a first layer of microcomponents on one face of a first substrate, the first substrate being held flush against a holding surface of a first support during production of the microcomponents, and a step of bonding the face of the first substrate comprising the layer of microcomponents onto a second substrate. During the bonding step, the first substrate is held flush against a second support, the holding surface of which has a flatness that is less than or equal to that of the first support used during production of the first layer of microcomponents.

Method of fabricating a multilayer structure with circuit layer transfer

A method of bonding by molecular bonding between at least one lower wafer and an upper wafer comprises positioning the upper wafer on the lower wafer. In accordance with the invention, a contact force is applied to a peripheral side of at least one of the two wafers in order to initiate a bonding wave between the two wafers.

Method of bonding by molecular bonding

A method for the direct bonding of a first wafer having an intrinsic curvature before bonding to a second wafer having an intrinsic curvature before bonding, at least one of the two wafers including at least one series of microcomponents. The method includes bringing the two wafers into contact with each other so as to initiate the propagation of a bonding wave therebetween while imposing a predefined bonding curvature in the form of a paraboloid of revolution on one of the two wafers depending at least upon the intrinsic curvature before bonding of the wafer that includes the microcomponents, with the other wafer being free to conform to the predefined bonding curvature.

Direct bonding method with reduction in overlay misalignment

A method of bonding a first substrate to a second substrate by molecular bonding by forming an insulating layer on the bonding face of the first substrate, chemical-mechanical polishing of the insulating layer, activating a bonding surface of the second substrate by plasma treatment, etching an exposed surface of the insulating layer, and bonding together the two substrates together by molecular bonding wherein the etching is conducted after the chemical-mechanical polishing and before the bonding.

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Grenoble, France

Arnaud Castex