Kromek Limited

Durham Scientific Crystals Limited

Arnab Basu

Max Robinson

Ben Cantwell

Andy Brinkman

Ian Radley

Gary Gibson

Benjamin John Cantwell

Ben 152 Highfield Rise Cantwell

Max 1 Bishop's Court Low Road Robinson

A detector device is described comprising an x-ray detector structure having a detection surface defining at least one separately addressable region for detecting incident x-ray radiation intensity thereon, wherein the separately addressable region is divided into a plurality of sub-regions provided on the detection surface each provided with a filter layer on the detection surface, the filter layers of a given separately addressable region comprising discrete and different materials with discrete defined and spectroscopically spaced x-ray absorption edges. A method of device manufacture, and an apparatus and method for the inspection and characterization of materials employing such a detector device, are also described.

Detector device, inspection apparatus and method

A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.

Semiconductor device and method of manufacture thereof

Apparatus for vapor phase growing of crystals having a single multi-zone heater arranged to heat a heated zone to give a predetermined temperature profile along the length of the heated zone. A generally U-shaped tube having a first limb, a second limb, and a linkage connecting the first and second limbs is located on the heated zone. The first limb contains a source material. The second limb supports a seed such that the source material and seed are spaced longitudinally within the heated zone to provide a predetermined temperature differential between the source and seed. The crystal is grown on the seed.

Apparatus for crystal growth

Device and method of forming a device in which a substrate () is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material () is formed on the substrate, either directly on the substrate () or with an intervening thin film layer or transition region (). A particular application of the device is for a radiation detector.

Semiconductor device with a bulk single crystal on a substrate

A method and apparatus for obtaining radiation transmission data including providing a radiation source, e.g., x-ray or gamma-ray source, and a radiation detector system, e.g., x-ray or gamma-ray detection system, spaced therefrom to define a scanning zone therebetween, the detector system capable of detecting and collecting spectroscopically resolvable information about incident radiation. Collecting a dataset of information about radiation incident including transmissivity of an object in the scanning zone at at least one scanning position from radiation transmitted through the object and received at the detector system. Resolving each dataset spectroscopically across a plurality of frequency bands within the spectrum of the source; at least one of the frequency bands corresponding to a characteristically scattered wavelength of a target species to be identified. The absence of or substantial reduction in a transmitted signal intensity at the frequency band is interpreted as the presence of the said target species.

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Belmont, United Kingdom

Arnab Basu