Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Armelle Even

Ivan-Christophe Robin

Bérangère Hyot

Amélie Dussaigne

Bruno-Jules Daudin

Timotee Journot

Miryam Elouneg-Jamroz

The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterized in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (T) no lower than 1050&#xb0; C. and to a stream of ammonia.

Method for producing a crystalline layer in a III-N compound by van der Waals epitaxy from graphene

Disclosed is a light-emitting diode containing: first and second semiconductor layers respectively n-doped and p-doped, forming a p-n junction; an active zone placed between the first and second layers, including an InGaN emitting layer able to form a quantum well, and two InGaN, where 0&#x3c;Y&#x3c;X, barrier layers between which the emitting layer is placed; and an intermediate layer, which is placed either in the barrier layer located between the emitting layer and the first layer and portions of which are then on either side of the intermediate layer, or placed between the barrier layer and the emitting layer. The intermediate layer includes a III-N semiconductor of bandgap wider than that of the barrier layer. The second layer includes GaN or InGaN, where 0&#x3c;W&#x3c;Y, and the first layer includes InGaN, where V&#x3e;W&#x3e;0.

Light-emitting diode comprising at least one wider bandgap intermediate layer placed in at least one barrier layer of the light-emitting zone

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Rennes, France

Armelle Even